Band lineups at the GaSb-AlxGa1-xSb hetero-junction: Experimental evidence for a new common anion rule

J. Menéndez; A. Pinczuk; D. J. Werder; J. P. Valladares; T. H. Chiu; W. T. Tsang

doi:10.1016/0038-1098(87)90720-4

Band lineups at the GaSb-Al_xGa_1-xSb hetero-junction: Experimental evidence for a new common anion rule

J. Menéndez, A. Pinczuk, D. J. Werder, J. P. Valladares, T. H. Chiu, W. T. Tsang

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46 Scopus citations

Abstract

The valence band offset in GaSb-Al_xGa_1-xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-Al_xGa_1-xAs counterparts. This result suggests the validity of a restricted form of the Common Anion Rule, which can be stated as follows: The valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.

Original language	English (US)
Pages (from-to)	703-706
Number of pages	4
Journal	Solid State Communications
Volume	61
Issue number	11
DOIs	https://doi.org/10.1016/0038-1098(87)90720-4
State	Published - Mar 1987
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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abstract = "The valence band offset in GaSb-AlxGa1-xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-AlxGa1-xAs counterparts. This result suggests the validity of a restricted form of the Common Anion Rule, which can be stated as follows: The valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.",

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AU - Pinczuk, A.

AU - Werder, D. J.

AU - Valladares, J. P.

AU - Chiu, T. H.

AU - Tsang, W. T.

PY - 1987/3

Y1 - 1987/3

N2 - The valence band offset in GaSb-AlxGa1-xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-AlxGa1-xAs counterparts. This result suggests the validity of a restricted form of the Common Anion Rule, which can be stated as follows: The valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.

AB - The valence band offset in GaSb-AlxGa1-xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-AlxGa1-xAs counterparts. This result suggests the validity of a restricted form of the Common Anion Rule, which can be stated as follows: The valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.

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Band lineups at the GaSb-Al_xGa_1-xSb hetero-junction: Experimental evidence for a new common anion rule

Abstract

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