Band lineups at the GaSb-AlxGa1-xSb hetero-junction: Experimental evidence for a new common anion rule

Jose Menendez, A. Pinczuk, D. J. Werder, J. P. Valladares, T. H. Chiu, W. T. Tsang

Research output: Contribution to journalArticle

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Abstract

The valence band offset in GaSb-AlxGa1-xSb quantum wells has been determined by a light scattering method and found to be nearly the same as in their GaAs-AlxGa1-xAs counterparts. This result suggests the validity of a restricted form of the Common Anion Rule, which can be stated as follows: The valence band offset in a common anion heterostructure tends to be independent of the particular anion chosen. This new rule consistent with Tersoff's band lineup theory and also with a recent tight binding theory by Harrison and Tersoff.

Original languageEnglish (US)
Pages (from-to)703-706
Number of pages4
JournalSolid State Communications
Volume61
Issue number11
DOIs
Publication statusPublished - 1987
Externally publishedYes

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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