Abstract
Indium-tin-oxide (ITO) thin films on polyethylene napthalate (PEN) with high carrier concentration (∼ 1021 cm3) have been grown by electron-beam deposition without the introduction of oxygen into the chamber. The electrical properties of the ITO films (such as, carrier concentration, electrical mobility, and resistivity) abruptly changed after annealing in the air atmospheres. In addition, optical transmittance and optical band gap values significantly changed after heat treatment. The optical band gap narrowing behavior is observed in the as-deposited sample because of impurity band and heavy carrier concentration. The influence of annealing in air on the electrical and optical properties of ITOPEN samples can be explained by the change in the free electron concentration, which is evaluated in terms of the oxygen content. Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses are used to determine the oxygen content in the film. Hall effect measurements are used to determine the dependence of electrical properties on oxygen content.
| Original language | English (US) |
|---|---|
| Article number | 083715 |
| Journal | Journal of Applied Physics |
| Volume | 100 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2006 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air. / Han, H.; Mayer, J. W.; Alford, Terry.
In: Journal of Applied Physics, Vol. 100, No. 8, 083715, 2006.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Band gap shift in the indium-tin-oxide films on polyethylene napthalate after thermal annealing in air
AU - Han, H.
AU - Mayer, J. W.
AU - Alford, Terry
PY - 2006
Y1 - 2006
N2 - Indium-tin-oxide (ITO) thin films on polyethylene napthalate (PEN) with high carrier concentration (∼ 1021 cm3) have been grown by electron-beam deposition without the introduction of oxygen into the chamber. The electrical properties of the ITO films (such as, carrier concentration, electrical mobility, and resistivity) abruptly changed after annealing in the air atmospheres. In addition, optical transmittance and optical band gap values significantly changed after heat treatment. The optical band gap narrowing behavior is observed in the as-deposited sample because of impurity band and heavy carrier concentration. The influence of annealing in air on the electrical and optical properties of ITOPEN samples can be explained by the change in the free electron concentration, which is evaluated in terms of the oxygen content. Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses are used to determine the oxygen content in the film. Hall effect measurements are used to determine the dependence of electrical properties on oxygen content.
AB - Indium-tin-oxide (ITO) thin films on polyethylene napthalate (PEN) with high carrier concentration (∼ 1021 cm3) have been grown by electron-beam deposition without the introduction of oxygen into the chamber. The electrical properties of the ITO films (such as, carrier concentration, electrical mobility, and resistivity) abruptly changed after annealing in the air atmospheres. In addition, optical transmittance and optical band gap values significantly changed after heat treatment. The optical band gap narrowing behavior is observed in the as-deposited sample because of impurity band and heavy carrier concentration. The influence of annealing in air on the electrical and optical properties of ITOPEN samples can be explained by the change in the free electron concentration, which is evaluated in terms of the oxygen content. Rutherford backscattering spectrometry and x-ray photoelectron spectroscopy analyses are used to determine the oxygen content in the film. Hall effect measurements are used to determine the dependence of electrical properties on oxygen content.
UR - http://www.scopus.com/inward/record.url?scp=33750529799&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33750529799&partnerID=8YFLogxK
U2 - 10.1063/1.2357647
DO - 10.1063/1.2357647
M3 - Article
AN - SCOPUS:33750529799
VL - 100
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 8
M1 - 083715
ER -