13 Citations (Scopus)

Abstract

Si-Ge-Sn alloys have emerged as promising group IV semiconductors for the direct integration of optical designs on Si platforms, thus representing an entirely group IV approach to advance IR technologies. In this paper we discuss new developments in materials and devices that have led to the demonstration of photodiodes with enhanced performance relative to Ge reference systems as well as light-emitting semiconductors on silicon that exhibit strong direct-gap photoluminescence obtained via simultaneous n-type heavy doping and Sn alloying. With regard to detectors we present new results for Ge0.98Sn 0.02 diodes with IR coverage extended down to 1800 nm and exhibiting enhanced optical and electrical response relative to initial prototypes grown directly on Si substrates. We also review the fabrication of SiGeSn/Ge(100) diodes with tunable absorption edges and very low dark current densities superior to those of Ge and GeSn counterparts. Particular emphasis is placed on devices exhibiting highly desirable 1 eV direct gaps and specific p-n heterostructure designs that are suitable for PV applications. These provide a starting point for the development of an entirely group-IV-based 1 eV junction that is proposed to enhance the efficiency of conventional III-V devices grown on Ge.

Original languageEnglish (US)
JournalECS Journal of Solid State Science and Technology
Volume2
Issue number9
DOIs
StatePublished - 2013

Fingerprint

Photodiodes
Optoelectronic devices
Diodes
Energy gap
Semiconductor materials
Optical design
Dark currents
Silicon
Alloying
Heterojunctions
Photoluminescence
Current density
Demonstrations
Doping (additives)
Detectors
Fabrication
Substrates
Si-Ge alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices. / Beeler, Richard T.; Gallagher, James; Xu, Chi; Jiang, Liying; Senaratne, Charutha L.; Smith, David; Menendez, Jose; Chizmeshya, Andrew; Kouvetakis, John.

In: ECS Journal of Solid State Science and Technology, Vol. 2, No. 9, 2013.

Research output: Contribution to journalArticle

@article{9a4744fd717746dca2885c7281f7b70e,
title = "Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices",
abstract = "Si-Ge-Sn alloys have emerged as promising group IV semiconductors for the direct integration of optical designs on Si platforms, thus representing an entirely group IV approach to advance IR technologies. In this paper we discuss new developments in materials and devices that have led to the demonstration of photodiodes with enhanced performance relative to Ge reference systems as well as light-emitting semiconductors on silicon that exhibit strong direct-gap photoluminescence obtained via simultaneous n-type heavy doping and Sn alloying. With regard to detectors we present new results for Ge0.98Sn 0.02 diodes with IR coverage extended down to 1800 nm and exhibiting enhanced optical and electrical response relative to initial prototypes grown directly on Si substrates. We also review the fabrication of SiGeSn/Ge(100) diodes with tunable absorption edges and very low dark current densities superior to those of Ge and GeSn counterparts. Particular emphasis is placed on devices exhibiting highly desirable 1 eV direct gaps and specific p-n heterostructure designs that are suitable for PV applications. These provide a starting point for the development of an entirely group-IV-based 1 eV junction that is proposed to enhance the efficiency of conventional III-V devices grown on Ge.",
author = "Beeler, {Richard T.} and James Gallagher and Chi Xu and Liying Jiang and Senaratne, {Charutha L.} and David Smith and Jose Menendez and Andrew Chizmeshya and John Kouvetakis",
year = "2013",
doi = "10.1149/2.034309jss",
language = "English (US)",
volume = "2",
journal = "ECS Journal of Solid State Science and Technology",
issn = "2162-8769",
publisher = "Electrochemical Society, Inc.",
number = "9",

}

TY - JOUR

T1 - Band gap-engineered group-IV optoelectronic semiconductors, photodiodes and prototype photovoltaic devices

AU - Beeler, Richard T.

AU - Gallagher, James

AU - Xu, Chi

AU - Jiang, Liying

AU - Senaratne, Charutha L.

AU - Smith, David

AU - Menendez, Jose

AU - Chizmeshya, Andrew

AU - Kouvetakis, John

PY - 2013

Y1 - 2013

N2 - Si-Ge-Sn alloys have emerged as promising group IV semiconductors for the direct integration of optical designs on Si platforms, thus representing an entirely group IV approach to advance IR technologies. In this paper we discuss new developments in materials and devices that have led to the demonstration of photodiodes with enhanced performance relative to Ge reference systems as well as light-emitting semiconductors on silicon that exhibit strong direct-gap photoluminescence obtained via simultaneous n-type heavy doping and Sn alloying. With regard to detectors we present new results for Ge0.98Sn 0.02 diodes with IR coverage extended down to 1800 nm and exhibiting enhanced optical and electrical response relative to initial prototypes grown directly on Si substrates. We also review the fabrication of SiGeSn/Ge(100) diodes with tunable absorption edges and very low dark current densities superior to those of Ge and GeSn counterparts. Particular emphasis is placed on devices exhibiting highly desirable 1 eV direct gaps and specific p-n heterostructure designs that are suitable for PV applications. These provide a starting point for the development of an entirely group-IV-based 1 eV junction that is proposed to enhance the efficiency of conventional III-V devices grown on Ge.

AB - Si-Ge-Sn alloys have emerged as promising group IV semiconductors for the direct integration of optical designs on Si platforms, thus representing an entirely group IV approach to advance IR technologies. In this paper we discuss new developments in materials and devices that have led to the demonstration of photodiodes with enhanced performance relative to Ge reference systems as well as light-emitting semiconductors on silicon that exhibit strong direct-gap photoluminescence obtained via simultaneous n-type heavy doping and Sn alloying. With regard to detectors we present new results for Ge0.98Sn 0.02 diodes with IR coverage extended down to 1800 nm and exhibiting enhanced optical and electrical response relative to initial prototypes grown directly on Si substrates. We also review the fabrication of SiGeSn/Ge(100) diodes with tunable absorption edges and very low dark current densities superior to those of Ge and GeSn counterparts. Particular emphasis is placed on devices exhibiting highly desirable 1 eV direct gaps and specific p-n heterostructure designs that are suitable for PV applications. These provide a starting point for the development of an entirely group-IV-based 1 eV junction that is proposed to enhance the efficiency of conventional III-V devices grown on Ge.

UR - http://www.scopus.com/inward/record.url?scp=84887359900&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887359900&partnerID=8YFLogxK

U2 - 10.1149/2.034309jss

DO - 10.1149/2.034309jss

M3 - Article

VL - 2

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

SN - 2162-8769

IS - 9

ER -