Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

Hui Cai, Emmanuel Soignard, Can Ataca, Bin Chen, Changhyun Ko, Toshihiro Aoki, Anupum Pant, Xiuqing Meng, Shengxue Yang, Jeffrey Grossman, Frank D. Ogletree, Sefaattin Tongay

Research output: Contribution to journalArticle

18 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)7375-7382
Number of pages8
JournalAdvanced Materials
DOIs
StatePublished - Sep 14 2016

Fingerprint

Gallium compounds
Selenium compounds
Silicon compounds
Inorganic compounds
Chalcogenides
Van der Waals forces
Gallium
Epitaxial growth
Sapphire
Energy gap
Substrates
Layered semiconductors

Keywords

  • 2D materials
  • band engineering
  • van der Waals epitaxy

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides. / Cai, Hui; Soignard, Emmanuel; Ataca, Can; Chen, Bin; Ko, Changhyun; Aoki, Toshihiro; Pant, Anupum; Meng, Xiuqing; Yang, Shengxue; Grossman, Jeffrey; Ogletree, Frank D.; Tongay, Sefaattin.

In: Advanced Materials, 14.09.2016, p. 7375-7382.

Research output: Contribution to journalArticle

Cai, H, Soignard, E, Ataca, C, Chen, B, Ko, C, Aoki, T, Pant, A, Meng, X, Yang, S, Grossman, J, Ogletree, FD & Tongay, S 2016, 'Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides', Advanced Materials, pp. 7375-7382. https://doi.org/10.1002/adma.201601184
Cai, Hui ; Soignard, Emmanuel ; Ataca, Can ; Chen, Bin ; Ko, Changhyun ; Aoki, Toshihiro ; Pant, Anupum ; Meng, Xiuqing ; Yang, Shengxue ; Grossman, Jeffrey ; Ogletree, Frank D. ; Tongay, Sefaattin. / Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides. In: Advanced Materials. 2016 ; pp. 7375-7382.
@article{cf1ebf55ef2344cfb8a38ff2d5799920,
title = "Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides",
keywords = "2D materials, band engineering, van der Waals epitaxy",
author = "Hui Cai and Emmanuel Soignard and Can Ataca and Bin Chen and Changhyun Ko and Toshihiro Aoki and Anupum Pant and Xiuqing Meng and Shengxue Yang and Jeffrey Grossman and Ogletree, {Frank D.} and Sefaattin Tongay",
year = "2016",
month = "9",
day = "14",
doi = "10.1002/adma.201601184",
language = "English (US)",
pages = "7375--7382",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",

}

TY - JOUR

T1 - Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

AU - Cai, Hui

AU - Soignard, Emmanuel

AU - Ataca, Can

AU - Chen, Bin

AU - Ko, Changhyun

AU - Aoki, Toshihiro

AU - Pant, Anupum

AU - Meng, Xiuqing

AU - Yang, Shengxue

AU - Grossman, Jeffrey

AU - Ogletree, Frank D.

AU - Tongay, Sefaattin

PY - 2016/9/14

Y1 - 2016/9/14

KW - 2D materials

KW - band engineering

KW - van der Waals epitaxy

UR - http://www.scopus.com/inward/record.url?scp=84985994971&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84985994971&partnerID=8YFLogxK

U2 - 10.1002/adma.201601184

DO - 10.1002/adma.201601184

M3 - Article

C2 - 27271214

AN - SCOPUS:84985994971

SP - 7375

EP - 7382

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

ER -