Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides

Hui Cai, Emmanuel Soignard, Can Ataca, Bin Chen, Changhyun Ko, Toshihiro Aoki, Anupum Pant, Xiuqing Meng, Shengxue Yang, Jeffrey Grossman, Frank D. Ogletree, Sefaattin Tongay

Research output: Contribution to journalArticle

18 Scopus citations
Original languageEnglish (US)
Pages (from-to)7375-7382
Number of pages8
JournalAdvanced Materials
DOIs
StatePublished - Sep 14 2016

Keywords

  • 2D materials
  • band engineering
  • van der Waals epitaxy

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Cai, H., Soignard, E., Ataca, C., Chen, B., Ko, C., Aoki, T., Pant, A., Meng, X., Yang, S., Grossman, J., Ogletree, F. D., & Tongay, S. (2016). Band Engineering by Controlling vdW Epitaxy Growth Mode in 2D Gallium Chalcogenides. Advanced Materials, 7375-7382. https://doi.org/10.1002/adma.201601184