Band edge exciton states in AlN single crystals and epitaxial layers

L. Chen, Brian Skromme, R. F. Dalmau, R. Schlesser, Z. Sitar, C. Chen, W. Sun, J. Yang, M. A. Khan, M. L. Nakarmi, J. Y. Lin, H. X. Jiang

Research output: Contribution to journalArticle

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Abstract

The band-edge excitonic properties of AlN are investigated using low-temperamre (1.7 K) optical reflectance and transmission measurements of samples with various crystal orientations. The A, B, and C excitons are found to have energies of 6.025, 6.243, and 6.257 eV in unstrained material, which shift with strain. The results are compared to a calculation of exciton energies and oscillator strengths to yield a crystal-field splitting of -230 meV in unstrained AlN, in good agreement with previous ab initio calculations.

Original languageEnglish (US)
Pages (from-to)4334-4336
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number19
DOIs
StatePublished - Nov 8 2004

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excitons
single crystals
oscillator strengths
crystal field theory
reflectance
energy
shift
crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chen, L., Skromme, B., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., ... Jiang, H. X. (2004). Band edge exciton states in AlN single crystals and epitaxial layers. Applied Physics Letters, 85(19), 4334-4336. https://doi.org/10.1063/1.1818733

Band edge exciton states in AlN single crystals and epitaxial layers. / Chen, L.; Skromme, Brian; Dalmau, R. F.; Schlesser, R.; Sitar, Z.; Chen, C.; Sun, W.; Yang, J.; Khan, M. A.; Nakarmi, M. L.; Lin, J. Y.; Jiang, H. X.

In: Applied Physics Letters, Vol. 85, No. 19, 08.11.2004, p. 4334-4336.

Research output: Contribution to journalArticle

Chen, L, Skromme, B, Dalmau, RF, Schlesser, R, Sitar, Z, Chen, C, Sun, W, Yang, J, Khan, MA, Nakarmi, ML, Lin, JY & Jiang, HX 2004, 'Band edge exciton states in AlN single crystals and epitaxial layers', Applied Physics Letters, vol. 85, no. 19, pp. 4334-4336. https://doi.org/10.1063/1.1818733
Chen, L. ; Skromme, Brian ; Dalmau, R. F. ; Schlesser, R. ; Sitar, Z. ; Chen, C. ; Sun, W. ; Yang, J. ; Khan, M. A. ; Nakarmi, M. L. ; Lin, J. Y. ; Jiang, H. X. / Band edge exciton states in AlN single crystals and epitaxial layers. In: Applied Physics Letters. 2004 ; Vol. 85, No. 19. pp. 4334-4336.
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