Abstract

Vanadium oxide (VO 2) is a narrow band gap material (Eg 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T 343 K. To explore the electronic properties of VO 2, a sandwich structure was prepared with a 2 nm VO 2 layer embedded between an oxidized Si(100) surface and a 2 nm hafnium oxide (HfO 2) layer. The layer structure was confirmed with high resolution transmission electron microscopy. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy, and the band alignment was deduced on both n-type and p-type Si substrates. The valence band offset between VO 2 and SiO 2 is measured to be 4.0 eV. The valence band offset between HfO 2 and VO 2 is measured to be ∼3.4 eV. The band relation developed from these results demonstrates the potential for charge storage and switching for the embedded VO 2 layer.

Original languageEnglish (US)
Article number084105
JournalJournal of Applied Physics
Volume112
Issue number8
DOIs
StatePublished - Oct 15 2012

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hafnium oxides
vanadium oxides
interlayers
alignment
silicon
valence
sandwich structures
electronics
narrowband
photoelectric emission
insulators
transmission electron microscopy
electric fields
high resolution
metals
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Band alignment of vanadium oxide as an interlayer in a hafnium oxide-silicon gate stack structure. / Zhu, Chiyu; Kaur, Manpuneet; Tang, Fu; Liu, Xin; Smith, David; Nemanich, Robert.

In: Journal of Applied Physics, Vol. 112, No. 8, 084105, 15.10.2012.

Research output: Contribution to journalArticle

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abstract = "Vanadium oxide (VO 2) is a narrow band gap material (Eg 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T 343 K. To explore the electronic properties of VO 2, a sandwich structure was prepared with a 2 nm VO 2 layer embedded between an oxidized Si(100) surface and a 2 nm hafnium oxide (HfO 2) layer. The layer structure was confirmed with high resolution transmission electron microscopy. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy, and the band alignment was deduced on both n-type and p-type Si substrates. The valence band offset between VO 2 and SiO 2 is measured to be 4.0 eV. The valence band offset between HfO 2 and VO 2 is measured to be ∼3.4 eV. The band relation developed from these results demonstrates the potential for charge storage and switching for the embedded VO 2 layer.",
author = "Chiyu Zhu and Manpuneet Kaur and Fu Tang and Xin Liu and David Smith and Robert Nemanich",
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AU - Zhu, Chiyu

AU - Kaur, Manpuneet

AU - Tang, Fu

AU - Liu, Xin

AU - Smith, David

AU - Nemanich, Robert

PY - 2012/10/15

Y1 - 2012/10/15

N2 - Vanadium oxide (VO 2) is a narrow band gap material (Eg 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T 343 K. To explore the electronic properties of VO 2, a sandwich structure was prepared with a 2 nm VO 2 layer embedded between an oxidized Si(100) surface and a 2 nm hafnium oxide (HfO 2) layer. The layer structure was confirmed with high resolution transmission electron microscopy. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy, and the band alignment was deduced on both n-type and p-type Si substrates. The valence band offset between VO 2 and SiO 2 is measured to be 4.0 eV. The valence band offset between HfO 2 and VO 2 is measured to be ∼3.4 eV. The band relation developed from these results demonstrates the potential for charge storage and switching for the embedded VO 2 layer.

AB - Vanadium oxide (VO 2) is a narrow band gap material (Eg 0.7 eV) with a thermally induced insulator-metal phase transition at ∼343 K and evidence of an electric field induced transition at T 343 K. To explore the electronic properties of VO 2, a sandwich structure was prepared with a 2 nm VO 2 layer embedded between an oxidized Si(100) surface and a 2 nm hafnium oxide (HfO 2) layer. The layer structure was confirmed with high resolution transmission electron microscopy. The electronic properties were characterized with x-ray and ultraviolet photoemission spectroscopy, and the band alignment was deduced on both n-type and p-type Si substrates. The valence band offset between VO 2 and SiO 2 is measured to be 4.0 eV. The valence band offset between HfO 2 and VO 2 is measured to be ∼3.4 eV. The band relation developed from these results demonstrates the potential for charge storage and switching for the embedded VO 2 layer.

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