Abstract
Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO2) layers with a ∼1.0 nm VO2 interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7 eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4 eV.
Original language | English (US) |
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Article number | 011203 |
Journal | Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics |
Volume | 32 |
Issue number | 1 |
DOIs | |
State | Published - Jan 1 2014 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Instrumentation
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry