Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon

Chiyu Zhu, Sean L. Caudle, Jialing Yang, David Smith, Robert Nemanich

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7 Scopus citations

Abstract

Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO2) layers with a ∼1.0 nm VO2 interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7 eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4 eV.

Original languageEnglish (US)
Article number011203
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
StatePublished - Jan 1 2014

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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