Abstract

Vanadium dioxide (VO<inf>2</inf>) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO<inf>2</inf>) layers with a ∼1.0 nm VO<inf>2</inf> interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO<inf>2</inf>/HfO<inf>2</inf> interface valence band offset is found to be 0.7 eV, and the HfO<inf>2</inf>/VO<inf>2</inf> interface valence band offset is determined to be 3.4 eV.

Original languageEnglish (US)
Article number011203
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number1
DOIs
StatePublished - Jan 1 2014

Fingerprint

Silicon
Valence bands
alignment
Ultraviolet photoelectron spectroscopy
silicon
Electronic properties
Vanadium
valence
Energy gap
Phase transitions
Metals
Electric fields
ultraviolet spectroscopy
dioxides
X rays
vanadium
narrowband
interlayers
Substrates
insulators

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

@article{a47f18d244ab489cac2c0ae811c0d79b,
title = "Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon",
abstract = "Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO2) layers with a ∼1.0 nm VO2 interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7 eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4 eV.",
author = "Chiyu Zhu and Caudle, {Sean L.} and Jialing Yang and David Smith and Robert Nemanich",
year = "2014",
month = "1",
day = "1",
doi = "10.1116/1.4832341",
language = "English (US)",
volume = "32",
journal = "Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics",
issn = "2166-2746",
publisher = "AVS Science and Technology Society",
number = "1",

}

TY - JOUR

T1 - Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon

AU - Zhu, Chiyu

AU - Caudle, Sean L.

AU - Yang, Jialing

AU - Smith, David

AU - Nemanich, Robert

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO2) layers with a ∼1.0 nm VO2 interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7 eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4 eV.

AB - Vanadium dioxide (VO2) is a narrow band gap material that undergoes a metal-insulator phase transition at ∼343 K with evidence of an electric-field induced transition at T < 343 K. In this study, a sandwich-type dielectric structure is prepared consisting of two ∼1.5 nm hafnium oxide (HfO2) layers with a ∼1.0 nm VO2 interlayer grown on an oxidized n-type silicon substrate. The electronic properties of the sample were characterized by in-situ x-ray and ultraviolet photoelectron spectroscopy after each layer was deposited. The band alignment was analyzed after each growth step. The SiO2/HfO2 interface valence band offset is found to be 0.7 eV, and the HfO2/VO2 interface valence band offset is determined to be 3.4 eV.

UR - http://www.scopus.com/inward/record.url?scp=84900611803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84900611803&partnerID=8YFLogxK

U2 - 10.1116/1.4832341

DO - 10.1116/1.4832341

M3 - Article

VL - 32

JO - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

JF - Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

SN - 2166-2746

IS - 1

M1 - 011203

ER -