Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission

Shane Johnson, C. Z. Guo, S. Chaparro, Yu G. Sadofyev, J. Wang, Yu Cao, N. Samal, C. Navarro, J. Xu, S. Q. Yu, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Very thin mixed group-V layers deposited by molecular beam epitaxy (MBE) enable the precise bandgap engineering required to meet the demands of modern devices. In optoelectronic devices it is important to control material gain (wavefunction overlap) in addition to the bandgap. For example, the MBE growth of small bandgap GaAsSb on GaAs has application in 1300 nm datacom lasers. When comparing GaAs1-xSbx and InxGa1-xAs, the bulk material bandgaps are very similar for x

Original languageEnglish (US)
Title of host publicationMBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-198
Number of pages2
ISBN (Electronic)0780375815, 9780780375819
DOIs
StatePublished - 2002
Event12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States
Duration: Sep 15 2002Sep 20 2002

Other

Other12th International Conference on Molecular Beam Epitaxy, MBE 2002
CountryUnited States
CitySan Francisco
Period9/15/029/20/02

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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    Johnson, S., Guo, C. Z., Chaparro, S., Sadofyev, Y. G., Wang, J., Cao, Y., Samal, N., Navarro, C., Xu, J., Yu, S. Q., Ding, D., & Zhang, Y-H. (2002). Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 197-198). [1037827] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037827