Abstract
Very thin mixed group-V layers deposited by molecular beam epitaxy (MBE) enable the precise bandgap engineering required to meet the demands of modern devices. In optoelectronic devices it is important to control material gain (wavefunction overlap) in addition to the bandgap. For example, the MBE growth of small bandgap GaAsSb on GaAs has application in 1300 nm datacom lasers. When comparing GaAs1-xSbx and InxGa1-xAs, the bulk material bandgaps are very similar for x
Original language | English (US) |
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Title of host publication | MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 197-198 |
Number of pages | 2 |
ISBN (Electronic) | 0780375815, 9780780375819 |
DOIs | |
State | Published - 2002 |
Event | 12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002 |
Other
Other | 12th International Conference on Molecular Beam Epitaxy, MBE 2002 |
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Country | United States |
City | San Francisco |
Period | 9/15/02 → 9/20/02 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Chemistry