Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission

Shane Johnson; C. Z. Guo; S. Chaparro; Yu G. Sadofyev; J. Wang; Yu Cao; N. Samal; C. Navarro; J. Xu; S. Q. Yu; D. Ding; Yong-Hang Zhang

doi:10.1109/MBE.2002.1037827

Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission

Shane Johnson, C. Z. Guo, S. Chaparro, Yu G. Sadofyev, J. Wang, Yu Cao, N. Samal, C. Navarro, J. Xu, S. Q. Yu, D. Ding, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Very thin mixed group-V layers deposited by molecular beam epitaxy (MBE) enable the precise bandgap engineering required to meet the demands of modern devices. In optoelectronic devices it is important to control material gain (wavefunction overlap) in addition to the bandgap. For example, the MBE growth of small bandgap GaAsSb on GaAs has application in 1300 nm datacom lasers. When comparing GaAs_1-xSb_x and In_xGa_1-xAs, the bulk material bandgaps are very similar for x

Original language	English (US)
Title of host publication	MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	197-198
Number of pages	2
ISBN (Electronic)	0780375815, 9780780375819
DOIs	https://doi.org/10.1109/MBE.2002.1037827
State	Published - 2002
Event	12th International Conference on Molecular Beam Epitaxy, MBE 2002 - San Francisco, United States Duration: Sep 15 2002 → Sep 20 2002

Other

Other	12th International Conference on Molecular Beam Epitaxy, MBE 2002
Country	United States
City	San Francisco
Period	9/15/02 → 9/20/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

Access to Document

10.1109/MBE.2002.1037827

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Johnson, S., Guo, C. Z., Chaparro, S., Sadofyev, Y. G., Wang, J., Cao, Y., Samal, N., Navarro, C., Xu, J., Yu, S. Q., Ding, D., & Zhang, Y-H. (2002). Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission. In MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy (pp. 197-198). [1037827] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MBE.2002.1037827

Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission. / Johnson, Shane; Guo, C. Z.; Chaparro, S.; Sadofyev, Yu G.; Wang, J.; Cao, Yu; Samal, N.; Navarro, C.; Xu, J.; Yu, S. Q.; Ding, D.; Zhang, Yong-Hang.

MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. p. 197-198 1037827.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Johnson, S, Guo, CZ, Chaparro, S, Sadofyev, YG, Wang, J, Cao, Y, Samal, N, Navarro, C, Xu, J, Yu, SQ, Ding, D & Zhang, Y-H 2002, Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission. in MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy., 1037827, Institute of Electrical and Electronics Engineers Inc., pp. 197-198, 12th International Conference on Molecular Beam Epitaxy, MBE 2002, San Francisco, United States, 9/15/02. https://doi.org/10.1109/MBE.2002.1037827

Johnson, Shane ; Guo, C. Z. ; Chaparro, S. ; Sadofyev, Yu G. ; Wang, J. ; Cao, Yu ; Samal, N. ; Navarro, C. ; Xu, J. ; Yu, S. Q. ; Ding, D. ; Zhang, Yong-Hang. / Band alignment determination of MBE grown GaAsSb on GaAs with 1300 nm emission. MBE 2002 - 2002 12th International Conference on Molecular Beam Epitaxy. Institute of Electrical and Electronics Engineers Inc., 2002. pp. 197-198

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abstract = "Very thin mixed group-V layers deposited by molecular beam epitaxy (MBE) enable the precise bandgap engineering required to meet the demands of modern devices. In optoelectronic devices it is important to control material gain (wavefunction overlap) in addition to the bandgap. For example, the MBE growth of small bandgap GaAsSb on GaAs has application in 1300 nm datacom lasers. When comparing GaAs1-xSbx and InxGa1-xAs, the bulk material bandgaps are very similar for x",

author = "Shane Johnson and Guo, {C. Z.} and S. Chaparro and Sadofyev, {Yu G.} and J. Wang and Yu Cao and N. Samal and C. Navarro and J. Xu and Yu, {S. Q.} and D. Ding and Yong-Hang Zhang",

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AU - Johnson, Shane

AU - Guo, C. Z.

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AU - Wang, J.

AU - Cao, Yu

AU - Samal, N.

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AU - Ding, D.

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