Band alignment at the CdTe/InSb (001) heterointerface

Xingye Wang, Calli Campbell, Yong-Hang Zhang, Robert Nemanich

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

CdTe/InSb heterojunctions have attracted considerable attention because of its almost perfect lattice match and the presence of nonoctal interface bonding. This heterojunction is a model heterovalent system to describe band offsets. In this research, molecular beam epitaxy was used to deposit a ∼5 nm epitaxial CdTe (001) layer on an InSb (001) surface. Monochromatic x-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy were used to characterize the electronic states of clean InSb and CdTe surfaces and CdTe/InSb (001) heterostructures. A room temperature remote hydrogen-plasma process was used to clean the surfaces prior to characterization. The results indicate a valence band offset of 0.89 eV and a type-I (straddling gap) alignment for the CdTe/InSb (001) heterostructure interface. In addition, In-Te bonding was observed at the interface. Downward band bending of the InSb is attributed to excess electrons introduced by nonoctal In-Te interface bonding.

Original languageEnglish (US)
Article number031101
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume36
Issue number3
DOIs
StatePublished - May 1 2018

Fingerprint

Heterojunctions
alignment
Photoelectron spectroscopy
heterojunctions
photoelectric emission
Electronic states
hydrogen plasma
Valence bands
Ultraviolet spectroscopy
Molecular beam epitaxy
spectroscopy
Hydrogen
molecular beam epitaxy
Deposits
deposits
valence
Plasmas
X rays
Electrons
room temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Band alignment at the CdTe/InSb (001) heterointerface. / Wang, Xingye; Campbell, Calli; Zhang, Yong-Hang; Nemanich, Robert.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 36, No. 3, 031101, 01.05.2018.

Research output: Contribution to journalArticle

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