Band alignment at AlN/Si (111) and (001) interfaces

Sean W. King, Robert Nemanich, Robert F. Davis

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050-°C) and Al pre-exposures (1-15-min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be -3.5-±-0.3-eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6-±-0.3-eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be -2.7-±-0.3 and -0.4-±-0.3-eV, respectively.

Original languageEnglish (US)
Article number045304
JournalJournal of Applied Physics
Volume118
Issue number4
DOIs
StatePublished - Jul 28 2015

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alignment
valence
x ray spectroscopy
conduction bands
photoelectron spectroscopy
semiconductor devices
wurtzite
nitrides
molecular beam epitaxy
chemistry
silicon
gases
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Band alignment at AlN/Si (111) and (001) interfaces. / King, Sean W.; Nemanich, Robert; Davis, Robert F.

In: Journal of Applied Physics, Vol. 118, No. 4, 045304, 28.07.2015.

Research output: Contribution to journalArticle

King, Sean W. ; Nemanich, Robert ; Davis, Robert F. / Band alignment at AlN/Si (111) and (001) interfaces. In: Journal of Applied Physics. 2015 ; Vol. 118, No. 4.
@article{6e73a8e2b15a455f9bcd68c3903a5542,
title = "Band alignment at AlN/Si (111) and (001) interfaces",
abstract = "To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050-°C) and Al pre-exposures (1-15-min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be -3.5-±-0.3-eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6-±-0.3-eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be -2.7-±-0.3 and -0.4-±-0.3-eV, respectively.",
author = "King, {Sean W.} and Robert Nemanich and Davis, {Robert F.}",
year = "2015",
month = "7",
day = "28",
doi = "10.1063/1.4927515",
language = "English (US)",
volume = "118",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

TY - JOUR

T1 - Band alignment at AlN/Si (111) and (001) interfaces

AU - King, Sean W.

AU - Nemanich, Robert

AU - Davis, Robert F.

PY - 2015/7/28

Y1 - 2015/7/28

N2 - To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050-°C) and Al pre-exposures (1-15-min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be -3.5-±-0.3-eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6-±-0.3-eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be -2.7-±-0.3 and -0.4-±-0.3-eV, respectively.

AB - To advance the development of III-V nitride on silicon heterostructure semiconductor devices, we have utilized in-situ x-ray photoelectron spectroscopy (XPS) to investigate the chemistry and valence band offset (VBO) at interfaces formed by gas source molecular beam epitaxy of AlN on Si (001) and (111) substrates. For the range of growth temperatures (600-1050-°C) and Al pre-exposures (1-15-min) explored, XPS showed the formation of Si-N bonding at the AlN/Si interface in all cases. The AlN/Si VBO was determined to be -3.5-±-0.3-eV and independent of the Si orientation and degree of interfacial Si-N bond formation. The corresponding AlN/Si conduction band offset (CBO) was calculated to be 1.6-±-0.3-eV based on the measured VBO and band gap for wurtzite AlN. Utilizing these results, prior reports for the GaN/AlN band alignment, and transitive and commutative rules for VBOs, the VBO and CBO at the GaN/Si interface were determined to be -2.7-±-0.3 and -0.4-±-0.3-eV, respectively.

UR - http://www.scopus.com/inward/record.url?scp=84938275462&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84938275462&partnerID=8YFLogxK

U2 - 10.1063/1.4927515

DO - 10.1063/1.4927515

M3 - Article

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 045304

ER -