Band alignment and carrier recombination in GaAsSb/GaAs quantum wells

K. Hild, S. J. Sweeney, S. R. Jin, S. B. Healy, E. P. O'Reilly, Shane Johnson, J. B. Wang, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using a combination of experimental and theoretical techniques, we investigated the band alignment and the carrier recombination processes occurring in GaAsSb/GaAs structures. We find that for Sb fractions ∼30%, the band alignment is slightly type II. From studies on lasers based upon this material we show that at the high carrier densities required to achieve threshold, at room temperature, the devices are dominated by carrier leakage and non-radiative Auger recombination.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1431-1432
Number of pages2
DOIs
StatePublished - Dec 1 2007
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: Jul 24 2006Jul 28 2006

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period7/24/067/28/06

Keywords

  • Band alignment
  • Carrier recombination
  • GaAsSb
  • Optical communications
  • Semiconductor laser
  • VCSEL

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Hild, K., Sweeney, S. J., Jin, S. R., Healy, S. B., O'Reilly, E. P., Johnson, S., Wang, J. B., & Zhang, Y-H. (2007). Band alignment and carrier recombination in GaAsSb/GaAs quantum wells. In Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (pp. 1431-1432). (AIP Conference Proceedings; Vol. 893). https://doi.org/10.1063/1.2730443