BALLISTIC TRANSPORT IN SEMICONDUCTORS.

R. O. Grondin, P. Lugli, D. K. Ferry

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. It is shown that this enhancement is a consequence of the presence of scattering even on the very short time scale.

Original languageEnglish (US)
Pages (from-to)373-375
Number of pages3
JournalElectron device letters
VolumeEDL-3
Issue number12
StatePublished - Dec 1982
Externally publishedYes

Fingerprint

Ballistics
Scattering
Semiconductor materials

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Grondin, R. O., Lugli, P., & Ferry, D. K. (1982). BALLISTIC TRANSPORT IN SEMICONDUCTORS. Electron device letters, EDL-3(12), 373-375.

BALLISTIC TRANSPORT IN SEMICONDUCTORS. / Grondin, R. O.; Lugli, P.; Ferry, D. K.

In: Electron device letters, Vol. EDL-3, No. 12, 12.1982, p. 373-375.

Research output: Contribution to journalArticle

Grondin, RO, Lugli, P & Ferry, DK 1982, 'BALLISTIC TRANSPORT IN SEMICONDUCTORS.', Electron device letters, vol. EDL-3, no. 12, pp. 373-375.
Grondin RO, Lugli P, Ferry DK. BALLISTIC TRANSPORT IN SEMICONDUCTORS. Electron device letters. 1982 Dec;EDL-3(12):373-375.
Grondin, R. O. ; Lugli, P. ; Ferry, D. K. / BALLISTIC TRANSPORT IN SEMICONDUCTORS. In: Electron device letters. 1982 ; Vol. EDL-3, No. 12. pp. 373-375.
@article{78716a9de4ce4cbd9abdb54e16659a0e,
title = "BALLISTIC TRANSPORT IN SEMICONDUCTORS.",
abstract = "The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. It is shown that this enhancement is a consequence of the presence of scattering even on the very short time scale.",
author = "Grondin, {R. O.} and P. Lugli and Ferry, {D. K.}",
year = "1982",
month = "12",
language = "English (US)",
volume = "EDL-3",
pages = "373--375",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",

}

TY - JOUR

T1 - BALLISTIC TRANSPORT IN SEMICONDUCTORS.

AU - Grondin, R. O.

AU - Lugli, P.

AU - Ferry, D. K.

PY - 1982/12

Y1 - 1982/12

N2 - The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. It is shown that this enhancement is a consequence of the presence of scattering even on the very short time scale.

AB - The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. It is shown that this enhancement is a consequence of the presence of scattering even on the very short time scale.

UR - http://www.scopus.com/inward/record.url?scp=0020252056&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020252056&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0020252056

VL - EDL-3

SP - 373

EP - 375

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -