Abstract
The ballistic transport approximation in semiconductors is considered, in light of recent calculations which show that the accuracy of this approximation is improved when the mass appropriate to this effect is enhanced over the normal effective mass. We show that this enhancement is a consequence of the presence of scattering even on the very short time scale.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 373-375 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 3 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 1982 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering