Abstract
Ballistic transport has been of interest in semiconductor devices for quite some time, and its effect has been used to predict quite-different device performance. Here, we investigate the role of ballistic transport in a short-channel InGaAs/InAlAs HEMT through full-band cellular Monte Carlo simulations. We can examine the contrast in behavior between when scattering mechanisms are present and when they are turned off. When the scattering processes are completely removed, the output characteristics show a distinct change in behavior over all drain voltages. This result is in qualitative agreement with prior arguments, suggesting that triodelike behavior should be expected due to enhanced drain-induced barrier lowering. However, we find that explicit band-structure effects are observable in the output characteristics of the ballistic transistor. We also find that this distinctive behavior gradually disappears as scattering is turned on, particularly in the drain end of the device. We also develop a method of determining the probability that electrons pass through the gate region in a ballistic manner in the presence of realistic scattering. Even when the gate is only 10 nm long, we find that this probability is only on the order of 50% in these devices. We also examine the ballistic ratio in our device as a function of gate length.
| Original language | English (US) |
|---|---|
| Article number | 5299052 |
| Pages (from-to) | 2935-2944 |
| Number of pages | 10 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 56 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2009 |
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Keywords
- Ballistic transport
- Effective gate length
- Millimeter-wave transistors
- Monte Carlo methods
- Pseudomorphic high-electron mobility transistors (PHEMTs)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Ballistic transport in InP-based HEMTs. / Akis, Richard; Faralli, Nicolas; Ferry, David K.; Goodnick, Stephen; Phatak, Kunal A.; Saraniti, Marco.
In: IEEE Transactions on Electron Devices, Vol. 56, No. 12, 5299052, 12.2009, p. 2935-2944.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ballistic transport in InP-based HEMTs
AU - Akis, Richard
AU - Faralli, Nicolas
AU - Ferry, David K.
AU - Goodnick, Stephen
AU - Phatak, Kunal A.
AU - Saraniti, Marco
PY - 2009/12
Y1 - 2009/12
N2 - Ballistic transport has been of interest in semiconductor devices for quite some time, and its effect has been used to predict quite-different device performance. Here, we investigate the role of ballistic transport in a short-channel InGaAs/InAlAs HEMT through full-band cellular Monte Carlo simulations. We can examine the contrast in behavior between when scattering mechanisms are present and when they are turned off. When the scattering processes are completely removed, the output characteristics show a distinct change in behavior over all drain voltages. This result is in qualitative agreement with prior arguments, suggesting that triodelike behavior should be expected due to enhanced drain-induced barrier lowering. However, we find that explicit band-structure effects are observable in the output characteristics of the ballistic transistor. We also find that this distinctive behavior gradually disappears as scattering is turned on, particularly in the drain end of the device. We also develop a method of determining the probability that electrons pass through the gate region in a ballistic manner in the presence of realistic scattering. Even when the gate is only 10 nm long, we find that this probability is only on the order of 50% in these devices. We also examine the ballistic ratio in our device as a function of gate length.
AB - Ballistic transport has been of interest in semiconductor devices for quite some time, and its effect has been used to predict quite-different device performance. Here, we investigate the role of ballistic transport in a short-channel InGaAs/InAlAs HEMT through full-band cellular Monte Carlo simulations. We can examine the contrast in behavior between when scattering mechanisms are present and when they are turned off. When the scattering processes are completely removed, the output characteristics show a distinct change in behavior over all drain voltages. This result is in qualitative agreement with prior arguments, suggesting that triodelike behavior should be expected due to enhanced drain-induced barrier lowering. However, we find that explicit band-structure effects are observable in the output characteristics of the ballistic transistor. We also find that this distinctive behavior gradually disappears as scattering is turned on, particularly in the drain end of the device. We also develop a method of determining the probability that electrons pass through the gate region in a ballistic manner in the presence of realistic scattering. Even when the gate is only 10 nm long, we find that this probability is only on the order of 50% in these devices. We also examine the ballistic ratio in our device as a function of gate length.
KW - Ballistic transport
KW - Effective gate length
KW - Millimeter-wave transistors
KW - Monte Carlo methods
KW - Pseudomorphic high-electron mobility transistors (PHEMTs)
UR - http://www.scopus.com/inward/record.url?scp=79953646985&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79953646985&partnerID=8YFLogxK
U2 - 10.1109/TED.2009.2033167
DO - 10.1109/TED.2009.2033167
M3 - Article
AN - SCOPUS:79953646985
VL - 56
SP - 2935
EP - 2944
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 5299052
ER -