Ballistic electron transport in quasi-one-dimensional systems

D. A. Wharam, R. Newbury, M. Pepper, D. G. Hasko, H. Ahmed, J. E.F. Frost, D. A. Ritchie, D. C. Peacock, G. A.C. Jones, T. J. Thornton, U. Ekenberg

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Results of low-temperature resistance measurements performed upon short, narrow channels defined in the two-dimensional electron gas (2DEG) of GaAs-AlGaAs heterostructures are presented. The observed quantisation of resistance has been rigorously derived in recent theoretical models, notably the adiabatic model of electronic transport and the wide-narrow-wide geometry. The predictions of these two models are compared and their application to the experimental results is discussed. The application of a transverse magnetic field gives rise to the phenomenon of magnetic depopulation. A simple variational model has been used to model this behaviour and the derived results are contrasted with previous calculations. The additional spin-split plateaux observed in a parallel magnetic field have been used to determine the Landé g-factor and suggest that there is little or no enhancement. Results are also presented for a device which manifested oscillatory behaviour as a function of applied gate voltage and the observed Aharonov-Bohm oscillations have been used to characterise the device. The non-ohmic addition of resistance which has been observed in structures with two defined constrictions is discussed within the context of a recent theoretical model and is explained in terms of the adiabatic motion of electrons through the channel constriction.

Original languageEnglish (US)
Pages (from-to)233-238
Number of pages6
JournalSurface Science
Issue number1-3
StatePublished - Apr 2 1990
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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