Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Electron ballistic transport in an InP-based p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy at T = 300 K. The time evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×1016 cm-3 electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.

Original languageEnglish (US)
Pages (from-to)416-418
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999

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Ballistics
ballistics
Raman spectroscopy
Electrons
electrons
electron distribution
travel
Electron Transport
Nanostructures
electric fields
Electric fields

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy. / Tsen, Kong-Thon; Ferry, D. K.; Wang, Jye Shyang; Huang, Chao Hsiung; Lin, Hao Hsiung.

In: Physica B: Condensed Matter, Vol. 272, No. 1-4, 01.12.1999, p. 416-418.

Research output: Contribution to journalArticle

Tsen, Kong-Thon ; Ferry, D. K. ; Wang, Jye Shyang ; Huang, Chao Hsiung ; Lin, Hao Hsiung. / Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy. In: Physica B: Condensed Matter. 1999 ; Vol. 272, No. 1-4. pp. 416-418.
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