Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

Kong-Thon Tsen; D. K. Ferry; Jye Shyang Wang; Chao Hsiung Huang; Hao Hsiung Lin

doi:10.1016/S0921-4526(99)00313-0

Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

Kong-Thon Tsen, D. K. Ferry, Jye Shyang Wang, Chao Hsiung Huang, Hao Hsiung Lin

Research output: Contribution to journal › Conference article › peer-review

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Abstract

Electron ballistic transport in an InP-based p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy at T = 300 K. The time evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×10¹⁶ cm^-3 electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.

Original language	English (US)
Pages (from-to)	416-418
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	272
Issue number	1-4
DOIs	https://doi.org/10.1016/S0921-4526(99)00313-0
State	Published - Dec 1 1999
Event	Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn Duration: Jul 19 1999 → Jul 23 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/S0921-4526(99)00313-0

Cite this

@article{08867c4b0d664747871785ac436f0388,

title = "Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy",

abstract = "Electron ballistic transport in an InP-based p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy at T = 300 K. The time evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×1016 cm-3 electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.",

author = "Kong-Thon Tsen and Ferry, {D. K.} and Wang, {Jye Shyang} and Huang, {Chao Hsiung} and Lin, {Hao Hsiung}",

note = "Funding Information: This work was supported by the National Science Foundation under Grant No. DMR-9301100.; Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) ; Conference date: 19-07-1999 Through 23-07-1999",

year = "1999",

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doi = "10.1016/S0921-4526(99)00313-0",

language = "English (US)",

volume = "272",

pages = "416--418",

journal = "Physica B: Condensed Matter",

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TY - JOUR

T1 - Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

AU - Tsen, Kong-Thon

AU - Ferry, D. K.

AU - Wang, Jye Shyang

AU - Huang, Chao Hsiung

AU - Lin, Hao Hsiung

N1 - Funding Information: This work was supported by the National Science Foundation under Grant No. DMR-9301100.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - Electron ballistic transport in an InP-based p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy at T = 300 K. The time evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×1016 cm-3 electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.

AB - Electron ballistic transport in an InP-based p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy at T = 300 K. The time evolution of electron distribution, electron drift velocity has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n≅5×1016 cm-3 electrons travel quasi-ballistically - electron drift velocity increases linearly with time, during the first 150 fs. After 150 fs it increases sublinearly until reaching the peak value at about 300 fs. The electron drift velocity then decreases to its steady-state value.

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U2 - 10.1016/S0921-4526(99)00313-0

DO - 10.1016/S0921-4526(99)00313-0

M3 - Conference article

AN - SCOPUS:0033357864

SN - 0921-4526

VL - 272

SP - 416

EP - 418

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1-4

T2 - Proceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11)

Y2 - 19 July 1999 through 23 July 1999

ER -

Ballistic electron transport in InP observed by subpicosecond time-resolved Raman spectroscopy

Abstract

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