Abstract

A novel backgate modulation technique alleviating limitations associated with supply-regulated polar transmitters is proposed. The backgate of a partially depleted silicon-on-insulator metal-semiconductor field-effect transistor with a breakdown voltage of 15 V is used to modulate the gain and output power of an RF power amplifier (PA). The high-impedance backgate provides high-efficiency and wide-dynamic-range modulation of PA gain. Measured results at 1.8 GHz demonstrate 16% power-added efficiency improvement at 6-dB backed-off output power, compared with the same RF PA without backgate modulation.

Original languageEnglish (US)
Article number6476764
Pages (from-to)1599-1607
Number of pages9
JournalIEEE Transactions on Microwave Theory and Techniques
Volume61
Issue number4
DOIs
StatePublished - 2013

Fingerprint

power amplifiers
Power amplifiers
envelopes
Modulation
modulation
MISFET devices
output
MIS (semiconductors)
power efficiency
Electric breakdown
electrical faults
transmitters
dynamic range
Transmitters
field effect transistors
impedance
Silicon
silicon

Keywords

  • Backgate bias
  • envelope tracking
  • silicon-on-insulator (SOI) MESFET

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics
  • Radiation

Cite this

Backgate modulation technique for higher efficiency envelope tracking. / Ghajar, M. Reza; Wilk, Seth J.; Lepkowski, William; Bakkaloglu, Bertan; Thornton, Trevor.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 61, No. 4, 6476764, 2013, p. 1599-1607.

Research output: Contribution to journalArticle

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