Avalanche breakdown in SOI MESFETs

William Lepkowski; Seth J. Wilk; Anuradha Parsi; Marco Saraniti; David Ferry; Trevor Thornton

doi:10.1016/j.sse.2013.10.003

Avalanche breakdown in SOI MESFETs

William Lepkowski, Seth J. Wilk, Anuradha Parsi, Marco Saraniti, David Ferry, Trevor Thornton

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication.

Original language	English (US)
Pages (from-to)	78-80
Number of pages	3
Journal	Solid-State Electronics
Volume	91
DOIs	https://doi.org/10.1016/j.sse.2013.10.003
State	Published - 2014

Keywords

Avalanche multiplication
MESFETs
Partially-depleted
Schottky junction
Silicon-on-insulator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2013.10.003

Cite this

@article{1105814618d447aa85db0ad2af766ea1,

title = "Avalanche breakdown in SOI MESFETs",

abstract = "Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication.",

keywords = "Avalanche multiplication, MESFETs, Partially-depleted, Schottky junction, Silicon-on-insulator",

author = "William Lepkowski and Wilk, {Seth J.} and Anuradha Parsi and Marco Saraniti and David Ferry and Trevor Thornton",

note = "Funding Information: This work was supported in part by NASA under SBIR contract NNX11CF18P and by DARPA under STTR contract W31P4Q-10-C-0020.",

year = "2014",

doi = "10.1016/j.sse.2013.10.003",

language = "English (US)",

volume = "91",

pages = "78--80",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Avalanche breakdown in SOI MESFETs

AU - Lepkowski, William

AU - Wilk, Seth J.

AU - Parsi, Anuradha

AU - Saraniti, Marco

AU - Ferry, David

AU - Thornton, Trevor

N1 - Funding Information: This work was supported in part by NASA under SBIR contract NNX11CF18P and by DARPA under STTR contract W31P4Q-10-C-0020.

PY - 2014

Y1 - 2014

N2 - Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication.

AB - Metal-semiconductor field-effect-transistors (MESFETs) have been manufactured using a highly scaled 45 nm silicon-on-insulator (SOI) CMOS technology. The MESFETs display a reversible, soft breakdown at voltages greatly exceeding that of the standard CMOS devices. The breakdown voltage increases with the length of the access region between the MESFET channel and drain contact. The measured breakdown voltage is well described by a simple model based on avalanche multiplication.

KW - Avalanche multiplication

KW - MESFETs

KW - Partially-depleted

KW - Schottky junction

KW - Silicon-on-insulator

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DO - 10.1016/j.sse.2013.10.003

M3 - Article

AN - SCOPUS:84886712965

SN - 0038-1101

VL - 91

SP - 78

EP - 80

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Avalanche breakdown in SOI MESFETs

Abstract

Keywords

ASJC Scopus subject areas

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