Automatic synthesis of a 2.1 Ghz SiGe low noise amplifier

Gang Zhang, Aykut Dengi, L. Richard Carley

Research output: Contribution to conferencePaper

21 Scopus citations

Abstract

A 2.1 GHz low noise amplifier in a 0.5 μm 47 GHz SiGe BiCMOS process was synthesized and sent to fabrication. The circuit was synthesized to simultaneously meet multiple design specifications including noise figure, gain, power, impedance match, intermodulation, compression, stability with a state-of-art simulation-based circuit synthesis tool. The synthesis setup took about two days, and the synthesis run took about 2 hours on a pool of 10 networked SUN workstations. Noise figure of 1.2 dB, power gain of 16 dB, IIP3 of-6 dB, S11 of less than -15 dB, were achieved with 3.7 mA bias cur-rent at 2.5 V power supply. Data generated during synthesis was processed to show design trade-offs among competing performance goals. The trade-off between optimum noise match and input impedance match is discussed.

Original languageEnglish (US)
Pages125-128
Number of pages4
StatePublished - Jan 1 2002
Event2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
Duration: Jun 2 2002Jun 4 2002

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
CountryUnited States
CitySeatle, WA
Period6/2/026/4/02

ASJC Scopus subject areas

  • Engineering(all)

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    Zhang, G., Dengi, A., & Carley, L. R. (2002). Automatic synthesis of a 2.1 Ghz SiGe low noise amplifier. 125-128. Paper presented at 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States.