AUTOMATIC MEASUREMENT OF MINORITY CARRIER LIFETIMES IN SILICON FOR NONUNIFORM DOPED SAMPLES USING THE ZERBST METHOD.

Ian G. McGillivray, John M. Robertson, Anthony J. Walton

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

One of the problems of automatically measuring lifetime using the Zerbst technique is the estimation of the total time required for measurement. The paper addresses this problem, and the proposed method is applicable to both uniformly and nonuniformly doped samples. This enables the data to be measured in a manner which ensures that noise free plots are obtained.

Original languageEnglish (US)
Pages (from-to)161-167
Number of pages7
JournalIEE Proceedings I: Solid State and Electron Devices
Volume134
Issue number6
StatePublished - Dec 1987
Externally publishedYes

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Carrier lifetime
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  • Engineering(all)

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AUTOMATIC MEASUREMENT OF MINORITY CARRIER LIFETIMES IN SILICON FOR NONUNIFORM DOPED SAMPLES USING THE ZERBST METHOD. / McGillivray, Ian G.; Robertson, John M.; Walton, Anthony J.

In: IEE Proceedings I: Solid State and Electron Devices, Vol. 134, No. 6, 12.1987, p. 161-167.

Research output: Contribution to journalArticle

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