Attractive migration and coalescence: A significant process in the coarsening of TiSi2 islands on the Si(111) surface

W. C. Yang, M. Zeman, H. Ade, Robert Nemanich

Research output: Contribution to journalArticle

43 Citations (Scopus)

Abstract

Real time PEEM was used to observe the surface dynamics of TiSi2 islands on Si at high temperature. By monitoring the relative position of individual islands, it was found that the islands grew through both Ostwald ripening and attractive migration and coalescence. It was proposed that the attractive migration of the islands is the growth-decay flow of the island edges due to the nonuniform concentration around the islands.

Original languageEnglish (US)
JournalPhysical Review Letters
Volume90
Issue number13
StatePublished - Apr 4 2003
Externally publishedYes

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coalescing
Ostwald ripening
decay

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Attractive migration and coalescence : A significant process in the coarsening of TiSi2 islands on the Si(111) surface. / Yang, W. C.; Zeman, M.; Ade, H.; Nemanich, Robert.

In: Physical Review Letters, Vol. 90, No. 13, 04.04.2003.

Research output: Contribution to journalArticle

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