Atomic structure of the NiSi2/(111)Si interface

D. Cherns, G. R. Anstis, J. L. Hutchison, John Spence

Research output: Contribution to journalArticle

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Abstract

The structure of the NiSi2/(111)Si interface is investigated by the lattice imaging of (110) cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2·4 Å point-to-point resolution. NiSi2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.

Original languageEnglish (US)
Pages (from-to)849-862
Number of pages14
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume46
Issue number5
DOIs
StatePublished - Nov 1982

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys

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