ATOMIC STRUCTURE OF THE NiSi//2/(111)Si INTERFACE.

D. Cherns, G. R. Anstis, J. L. Hutchison, John Spence

Research output: Contribution to journalArticle

196 Citations (Scopus)

Abstract

The structure of the NiSi//2/(111)Si interface is investigated by the lattice imaging of cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2. 4 A point-to-point resolution. NiSi//2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.

Original languageEnglish (US)
Pages (from-to)849-862
Number of pages14
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Volume46
Issue number5
StatePublished - Nov 1982

Fingerprint

Silicon
Film thickness
Electron microscopes
Imaging techniques
film thickness
electron microscopes
silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics

Cite this

ATOMIC STRUCTURE OF THE NiSi//2/(111)Si INTERFACE. / Cherns, D.; Anstis, G. R.; Hutchison, J. L.; Spence, John.

In: Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties, Vol. 46, No. 5, 11.1982, p. 849-862.

Research output: Contribution to journalArticle

@article{d5423495d3cd470d8af5be971d2661c1,
title = "ATOMIC STRUCTURE OF THE NiSi//2/(111)Si INTERFACE.",
abstract = "The structure of the NiSi//2/(111)Si interface is investigated by the lattice imaging of cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2. 4 A point-to-point resolution. NiSi//2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.",
author = "D. Cherns and Anstis, {G. R.} and Hutchison, {J. L.} and John Spence",
year = "1982",
month = "11",
language = "English (US)",
volume = "46",
pages = "849--862",
journal = "Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties",
issn = "0141-8610",
publisher = "Taylor and Francis Ltd.",
number = "5",

}

TY - JOUR

T1 - ATOMIC STRUCTURE OF THE NiSi//2/(111)Si INTERFACE.

AU - Cherns, D.

AU - Anstis, G. R.

AU - Hutchison, J. L.

AU - Spence, John

PY - 1982/11

Y1 - 1982/11

N2 - The structure of the NiSi//2/(111)Si interface is investigated by the lattice imaging of cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2. 4 A point-to-point resolution. NiSi//2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.

AB - The structure of the NiSi//2/(111)Si interface is investigated by the lattice imaging of cross-sectional specimens in a JEOL 200CX transmission electron microscope with 2. 4 A point-to-point resolution. NiSi//2 is epitaxial and doubly-positioned on (111)Si; lattice images indicate that both silicon-silicide interfaces are atomically abrupt, smooth and well-characterized. It is shown that, although interface images are critically dependent on film thickness and defocus, careful experimental determination of these parameters and comparison with computed images enables atomic models of both interfaces to be derived.

UR - http://www.scopus.com/inward/record.url?scp=0020207349&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0020207349&partnerID=8YFLogxK

M3 - Article

VL - 46

SP - 849

EP - 862

JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

SN - 0141-8610

IS - 5

ER -