ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

F. A. Ponce, G. B. Anderson, J. M. Ballingall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsR.F.C. Farrow, J.F. Schetzina, J.T. Cheung
PublisherMaterials Research Soc
Pages199-208
Number of pages10
ISBN (Print)0931837553
StatePublished - Dec 1 1987
Externally publishedYes

Publication series

NameMaterials Research Society Symposia Proceedings
Volume90
ISSN (Print)0272-9172

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Ponce, F. A., Anderson, G. B., & Ballingall, J. M. (1987). ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. In R. F. C. Farrow, J. F. Schetzina, & J. T. Cheung (Eds.), Materials Research Society Symposia Proceedings (pp. 199-208). (Materials Research Society Symposia Proceedings; Vol. 90). Materials Research Soc.