ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.

Fernando Ponce, G. B. Anderson, J. M. Ballingall

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsR.F.C. Farrow, J.F. Schetzina, J.T. Cheung
Place of PublicationPittsburgh, PA, USA
PublisherMaterials Research Soc
Pages199-208
Number of pages10
Volume90
ISBN (Print)0931837553
StatePublished - 1987
Externally publishedYes

Fingerprint

Molecular beams
Epitaxial layers
Epitaxial growth
High resolution transmission electron microscopy
Crystal atomic structure
Defect structures
Superlattices
Semiconductor materials
Substrates
gallium arsenide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ponce, F., Anderson, G. B., & Ballingall, J. M. (1987). ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. In R. F. C. Farrow, J. F. Schetzina, & J. T. Cheung (Eds.), Materials Research Society Symposia Proceedings (Vol. 90, pp. 199-208). Pittsburgh, PA, USA: Materials Research Soc.

ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. / Ponce, Fernando; Anderson, G. B.; Ballingall, J. M.

Materials Research Society Symposia Proceedings. ed. / R.F.C. Farrow; J.F. Schetzina; J.T. Cheung. Vol. 90 Pittsburgh, PA, USA : Materials Research Soc, 1987. p. 199-208.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ponce, F, Anderson, GB & Ballingall, JM 1987, ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. in RFC Farrow, JF Schetzina & JT Cheung (eds), Materials Research Society Symposia Proceedings. vol. 90, Materials Research Soc, Pittsburgh, PA, USA, pp. 199-208.
Ponce F, Anderson GB, Ballingall JM. ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. In Farrow RFC, Schetzina JF, Cheung JT, editors, Materials Research Society Symposia Proceedings. Vol. 90. Pittsburgh, PA, USA: Materials Research Soc. 1987. p. 199-208
Ponce, Fernando ; Anderson, G. B. ; Ballingall, J. M. / ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES. Materials Research Society Symposia Proceedings. editor / R.F.C. Farrow ; J.F. Schetzina ; J.T. Cheung. Vol. 90 Pittsburgh, PA, USA : Materials Research Soc, 1987. pp. 199-208
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