@inproceedings{e6fa29f092954b76bd255e1a348c81fc,
title = "ATOMIC STRUCTURE OF HgTe AND CdTe EPITAXIAL LAYERS GROWN BY MBE ON GaAs SUBSTRATES.",
abstract = "Using high resolution transmission electron microscopy (HRTEM) it is possible to directly image the projected structure of semiconductors with point resolutions at the atomic level. This technique has been applied to the study of interface and defect structures associated with molecular beam epitaxial (MBE) growth of HgCdTe layers on GaAs substrates. The structure of the CdTe/GaAs interfaces is described for (100) and (111) epitaxy. From the atomic structure, a model for the early stages of epitaxial growth is presented. The structure of HgTe-CdTe superlattices is discussed from the HRTEM point of view.",
author = "Ponce, {F. A.} and Anderson, {G. B.} and Ballingall, {J. M.}",
year = "1987",
month = dec,
day = "1",
language = "English (US)",
isbn = "0931837553",
series = "Materials Research Society Symposia Proceedings",
publisher = "Materials Research Soc",
pages = "199--208",
editor = "R.F.C. Farrow and J.F. Schetzina and J.T. Cheung",
booktitle = "Materials Research Society Symposia Proceedings",
}