Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures

Abhinandan Gangopadhyay, Aymeric Maros, Nikolai Faleev, David Smith

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.

Original languageEnglish (US)
Pages (from-to)77-80
Number of pages4
JournalScripta Materialia
Volume153
DOIs
StatePublished - Aug 1 2018

Fingerprint

Stacking faults
atomic structure
Heterojunctions
Strain relaxation
Aberrations
Dislocations (crystals)
crystal defects
Transmission electron microscopy
Scanning electron microscopy
Substrates
caps
aberration
transmission electron microscopy
scanning electron microscopy
gallium arsenide

Keywords

  • Compound semiconductors
  • Dislocations
  • HAADF-STEM
  • Heterostructures
  • Stacking faults

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Cite this

Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures. / Gangopadhyay, Abhinandan; Maros, Aymeric; Faleev, Nikolai; Smith, David.

In: Scripta Materialia, Vol. 153, 01.08.2018, p. 77-80.

Research output: Contribution to journalArticle

Gangopadhyay, Abhinandan ; Maros, Aymeric ; Faleev, Nikolai ; Smith, David. / Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures. In: Scripta Materialia. 2018 ; Vol. 153. pp. 77-80.
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