Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures

Abhinandan Gangopadhyay; Aymeric Maros; Nikolai Faleev; David Smith

doi:10.1016/j.scriptamat.2018.04.050

Atomic structure of dissociated 60° dislocations in GaAs/GaAs_0.92Sb_0.08/GaAs heterostructures

Abhinandan Gangopadhyay, Aymeric Maros, Nikolai Faleev, David Smith

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Dissociated 60° dislocations in low-misfit GaAs/GaAs_0.92Sb_0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.

Original language	English (US)
Pages (from-to)	77-80
Number of pages	4
Journal	Scripta Materialia
Volume	153
DOIs	https://doi.org/10.1016/j.scriptamat.2018.04.050
State	Published - Aug 2018

Keywords

Compound semiconductors
Dislocations
HAADF-STEM
Heterostructures
Stacking faults

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2018.04.050

Cite this

@article{47fbc6d3b1a04d199985ac8ae87f13a7,

title = "Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures",

abstract = "Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.",

keywords = "Compound semiconductors, Dislocations, HAADF-STEM, Heterostructures, Stacking faults",

author = "Abhinandan Gangopadhyay and Aymeric Maros and Nikolai Faleev and David Smith",

note = "Funding Information: This work was supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895 . The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = aug,

doi = "10.1016/j.scriptamat.2018.04.050",

language = "English (US)",

volume = "153",

pages = "77--80",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures

AU - Gangopadhyay, Abhinandan

AU - Maros, Aymeric

AU - Faleev, Nikolai

AU - Smith, David

N1 - Funding Information: This work was supported by the National Science Foundation and the Department of Energy under NSF CA No. EEC-1041895 . The authors acknowledge the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University. Publisher Copyright: © 2018 Elsevier Ltd

PY - 2018/8

Y1 - 2018/8

N2 - Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.

AB - Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.

KW - Compound semiconductors

KW - Dislocations

KW - HAADF-STEM

KW - Heterostructures

KW - Stacking faults

UR - http://www.scopus.com/inward/record.url?scp=85046700255&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85046700255&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2018.04.050

DO - 10.1016/j.scriptamat.2018.04.050

M3 - Article

AN - SCOPUS:85046700255

SN - 1359-6462

VL - 153

SP - 77

EP - 80

JO - Scripta Materialia

JF - Scripta Materialia

ER -