Atomic structure of dissociated 60° dislocations in GaAs/GaAs0.92Sb0.08/GaAs heterostructures

Abhinandan Gangopadhyay, Aymeric Maros, Nikolai Faleev, David Smith

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

Dissociated 60° dislocations in low-misfit GaAs/GaAs0.92Sb0.08/GaAs(001) heterostructures are investigated using aberration-corrected scanning transmission electron microscopy. Intrinsic stacking faults bounded by 30° and 90° Shockley partial dislocations are created at the compressively-strained film/substrate interface and the tensile-strained cap/film interface. Unpaired atomic columns are clearly observed at the cores of the 30° partial dislocations for most stacking faults. Comparison with atomic structural models establishes that these dissociated 60° dislocations belong primarily to glide set. For both interface types, the leading partial is located in the constraining layer whereas the trailing partial is located in the layer undergoing strain relaxation.

Original languageEnglish (US)
Pages (from-to)77-80
Number of pages4
JournalScripta Materialia
Volume153
DOIs
StatePublished - Aug 1 2018

Keywords

  • Compound semiconductors
  • Dislocations
  • HAADF-STEM
  • Heterostructures
  • Stacking faults

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

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