Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells

Yuji Zhao; Feng Wu; Tsung Jui Yang; Yuh Renn Wu; Shuji Nakamura; James S. Speck

doi:10.7567/APEX.7.025503

Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells

Yuji Zhao, Feng Wu, Tsung Jui Yang, Yuh Renn Wu, Shuji Nakamura, James S. Speck

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

Atomic-scale nanofacets were observed in semipolar (202̄1̄) and (202̄1) InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of (101̄1), (101̄1)and (101̄1) planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet structure. The In composition in the In_xGa_1-xN alloys followed a binominal distribution despite the formation of the nanofacet structure. One-dimensional (1D) Schrödinger- Poisson drift-diffusion simulation showed that these nanofacets and associated QW thickness fluctuations will lead to a large wavelength shift and a broadened spectral linewidth for semipolar QWs.

Original language	English (US)
Article number	025503
Journal	Applied Physics Express
Volume	7
Issue number	2
DOIs	https://doi.org/10.7567/APEX.7.025503
State	Published - Feb 2014
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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title = "Atomic-scale nanofacet structure in semipolar (20{\=2}{\=1}) and (20{\=2}1) InGaN single quantum wells",

abstract = "Atomic-scale nanofacets were observed in semipolar (20{\=2}{\=1}) and (20{\=2}1) InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of (10{\=1}1), (10{\=1}1)and (10{\=1}1) planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet structure. The In composition in the InxGa1-xN alloys followed a binominal distribution despite the formation of the nanofacet structure. One-dimensional (1D) Schr{\"o}dinger- Poisson drift-diffusion simulation showed that these nanofacets and associated QW thickness fluctuations will lead to a large wavelength shift and a broadened spectral linewidth for semipolar QWs.",

author = "Yuji Zhao and Feng Wu and Yang, {Tsung Jui} and Wu, {Yuh Renn} and Shuji Nakamura and Speck, {James S.}",

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doi = "10.7567/APEX.7.025503",

language = "English (US)",

volume = "7",

journal = "Applied Physics Express",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells

AU - Zhao, Yuji

AU - Wu, Feng

AU - Yang, Tsung Jui

AU - Wu, Yuh Renn

AU - Nakamura, Shuji

AU - Speck, James S.

PY - 2014/2

Y1 - 2014/2

N2 - Atomic-scale nanofacets were observed in semipolar (202̄1̄) and (202̄1) InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of (101̄1), (101̄1)and (101̄1) planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet structure. The In composition in the InxGa1-xN alloys followed a binominal distribution despite the formation of the nanofacet structure. One-dimensional (1D) Schrödinger- Poisson drift-diffusion simulation showed that these nanofacets and associated QW thickness fluctuations will lead to a large wavelength shift and a broadened spectral linewidth for semipolar QWs.

AB - Atomic-scale nanofacets were observed in semipolar (202̄1̄) and (202̄1) InGaN quantum wells (QWs)/GaN quantum barriers interfaces. Transmission electron microscopy studies showed that these nanofacets were mainly composed of (101̄1), (101̄1)and (101̄1) planes, which led to significant fluctuations in QW thickness. Atom probe tomography studies were carried out to visualize the nanofacet structure. The In composition in the InxGa1-xN alloys followed a binominal distribution despite the formation of the nanofacet structure. One-dimensional (1D) Schrödinger- Poisson drift-diffusion simulation showed that these nanofacets and associated QW thickness fluctuations will lead to a large wavelength shift and a broadened spectral linewidth for semipolar QWs.

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Atomic-scale nanofacet structure in semipolar (202̄1̄) and (202̄1) InGaN single quantum wells

Abstract

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