Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface

J. N. Stirman; Peter Crozier; David Smith; F. Phillipp; G. Brill; S. Sivananthan

doi:10.1063/1.1697625

Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface

J. N. Stirman, Peter Crozier, David Smith, F. Phillipp, G. Brill, S. Sivananthan

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The imaging of Lomer edge dislocations formed at Ge/Si(001) hetero-interfaces is discussed. They are imaged at 1.25-MeV atomic-resolution electron microscope. It is found that the dislocations were located close to the mean position of the interface and they were primarily asymmetrical. To validate the image interpretation, image simulations are used for the purpose.

Original language	English (US)
Pages (from-to)	2530-2532
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1697625
State	Published - Apr 5 2004

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1697625

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title = "Atomic-scale imaging of asymmetric Lomer dislocation cores at the Ge/Si(001) heterointerface",

abstract = "The imaging of Lomer edge dislocations formed at Ge/Si(001) hetero-interfaces is discussed. They are imaged at 1.25-MeV atomic-resolution electron microscope. It is found that the dislocations were located close to the mean position of the interface and they were primarily asymmetrical. To validate the image interpretation, image simulations are used for the purpose.",

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AU - Crozier, Peter

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AU - Brill, G.

AU - Sivananthan, S.

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N2 - The imaging of Lomer edge dislocations formed at Ge/Si(001) hetero-interfaces is discussed. They are imaged at 1.25-MeV atomic-resolution electron microscope. It is found that the dislocations were located close to the mean position of the interface and they were primarily asymmetrical. To validate the image interpretation, image simulations are used for the purpose.

AB - The imaging of Lomer edge dislocations formed at Ge/Si(001) hetero-interfaces is discussed. They are imaged at 1.25-MeV atomic-resolution electron microscope. It is found that the dislocations were located close to the mean position of the interface and they were primarily asymmetrical. To validate the image interpretation, image simulations are used for the purpose.

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