The imaging of Lomer edge dislocations formed at Ge/Si(001) hetero-interfaces is discussed. They are imaged at 1.25-MeV atomic-resolution electron microscope. It is found that the dislocations were located close to the mean position of the interface and they were primarily asymmetrical. To validate the image interpretation, image simulations are used for the purpose.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)