TY - JOUR
T1 - Atomic-scale characterization of (mostly zincblende) compound semiconductor heterostructures
AU - Smith, David
AU - Aoki, T.
AU - Furdyna, J. K.
AU - Liu, X.
AU - McCartney, Martha
AU - Zhang, Yong-Hang
N1 - Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2013
Y1 - 2013
N2 - This paper provides an overview of our recent atomic-scale studies of semiconductor heterostructures, based primarily on combinations of zincblende compound materials grown by molecular beam epitaxy. Interfacial strain due to lattice mismatch inevitably causes growth defects to be introduced. Analysis of defect type and distribution using image filtering allows residual strain to be estimated. Exploratory investigations using aberration-corrected electron microscopy, which enables individual atomic columns to be resolved, are also described.
AB - This paper provides an overview of our recent atomic-scale studies of semiconductor heterostructures, based primarily on combinations of zincblende compound materials grown by molecular beam epitaxy. Interfacial strain due to lattice mismatch inevitably causes growth defects to be introduced. Analysis of defect type and distribution using image filtering allows residual strain to be estimated. Exploratory investigations using aberration-corrected electron microscopy, which enables individual atomic columns to be resolved, are also described.
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U2 - 10.1088/1742-6596/471/1/012005
DO - 10.1088/1742-6596/471/1/012005
M3 - Conference article
AN - SCOPUS:84890611097
VL - 471
JO - Journal of Physics: Conference Series
JF - Journal of Physics: Conference Series
SN - 1742-6588
IS - 1
M1 - 012005
T2 - 18th Microscopy of Semiconducting Materials Conference, MSM 2013
Y2 - 7 April 2013 through 11 April 2013
ER -