Abstract

This paper provides an overview of our recent atomic-scale studies of semiconductor heterostructures, based primarily on combinations of zincblende compound materials grown by molecular beam epitaxy. Interfacial strain due to lattice mismatch inevitably causes growth defects to be introduced. Analysis of defect type and distribution using image filtering allows residual strain to be estimated. Exploratory investigations using aberration-corrected electron microscopy, which enables individual atomic columns to be resolved, are also described.

Original languageEnglish (US)
Article number012005
JournalJournal of Physics: Conference Series
Volume471
Issue number1
DOIs
StatePublished - Jan 1 2013
Event18th Microscopy of Semiconducting Materials Conference, MSM 2013 - Oxford, United Kingdom
Duration: Apr 7 2013Apr 11 2013

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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