TY - JOUR
T1 - Atomic-scale characterization of ii-vi compound semiconductors
AU - Smith, David
N1 - Funding Information:
The recent work at Arizona State University has been supported by the US Army Research Laboratory and the US Army Research Office under Contract #54657EL (Monitor: Dr. W.W. Clark). Ongoing collaborations with the groups of J.K. Furdyna, X. Liu (Notre Dame), R.N. Jacobs (NVESD), Y. Chen, G. Brill (ARL), and Y.H. Zhang (Arizona State University), as well as contributions to this work by former graduate students T. Aoki, J.J. Kim, L. Ouyang, X. Zhang, and W.F. Zhao, are gratefully acknowledged. The use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy is also acknowledged. Acquisition of the JEOL-ARM200F at Arizona State University was supported by NSF Grant DMR-0820196.
PY - 2013/11
Y1 - 2013/11
N2 - Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.
AB - Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.
KW - High-resolution electron microscopy
KW - aberration-corrected electron microscopy
KW - cadmium telluride
KW - mercury cadmium selenide
KW - mercury cadmium telluride
KW - zinc telluride
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U2 - 10.1007/s11664-013-2701-1
DO - 10.1007/s11664-013-2701-1
M3 - Article
AN - SCOPUS:84887209594
SN - 0361-5235
VL - 42
SP - 3168
EP - 3174
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 11
ER -