Abstract

Alloys of II-VI compound semiconductors with suitable band gap selection potentially provide broad coverage of wavelengths for photodetector applications. Achievement of high-quality epitaxial growth is, however, essential for successful development of integrated photonic and optoelectronic devices. Atomic-scale characterization of structural defects in II-VI heterostructures using electron microscopy plays an invaluable role in accomplishing this goal. This paper reviews some recent high-resolution studies of II-VI compound semiconductors with zincblende crystal structure, as grown epitaxially on commonly used substrates. Exploratory studies using aberration-corrected electron microscopes are also briefly considered.

Original languageEnglish (US)
Pages (from-to)3168-3174
Number of pages7
JournalJournal of Electronic Materials
Volume42
Issue number11
DOIs
StatePublished - Nov 1 2013

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Keywords

  • High-resolution electron microscopy
  • aberration-corrected electron microscopy
  • cadmium telluride
  • mercury cadmium selenide
  • mercury cadmium telluride
  • zinc telluride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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