Atomic-Resolution Structure Imaging of Misfit Dislocations at Heterovalent II-VI/III-V Interfaces

Brandon S. McKeon, Xinyu Liu, Jacek K. Furdyna, David J. Smith

Research output: Contribution to journalArticlepeer-review

Abstract

The atomically resolved structure of misfit dislocations (MDs) at heterovalent II-VI/III-V (001) compound semiconductor interfaces has been determined using aberration-corrected electron microscopy. The MDs at an ZnTe/InAs interface, which has small lattice mismatch (Δa/a ∼0.74%), are primarily 60° glide-set dislocations, with unpaired atomic columns at the dislocation cores mostly containing indium. Lomer dislocations observed at the ZnTe/InP interface (Δa/a ∼3.85%) consist of a 10-atom ring and two 5-atom rings, whereas shuffle-set Lomer dislocations observed at the ZnTe/GaAs interface (Δa/a ∼7.4%) have symmetrical 5/7-atom ring structures, although asymmetrical and disordered Lomer core structures are sometimes observed. Intensity line profiles across defect-free regions of the heterointerfaces indicate substantial interfacial intermixing. Thus, unpaired atomic columns at the MD cores are likely to consist of mixed atomic species.

Original languageEnglish (US)
Pages (from-to)2573-2579
Number of pages7
JournalACS Applied Electronic Materials
Volume3
Issue number6
DOIs
StatePublished - Jun 22 2021

Keywords

  • aberration-corrected electron microscopy
  • compound semiconductors
  • heterovalent interface
  • interdiffusion
  • lattice mismatch
  • misfit dislocation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrochemistry
  • Materials Chemistry

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