Atomic ordering in AlxGa1-xN thin-films

A. T. Wise; D. W. Kim; Nathan Newman; S. Mahajan

doi:10.1016/j.scriptamat.2005.09.045

Atomic ordering in Al_xGa_1-xN thin-films

A. T. Wise, D. W. Kim, Nathan Newman, S. Mahajan

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Samples of Al_xGa_1-xN with x_Al = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

Original language	English (US)
Pages (from-to)	153-157
Number of pages	5
Journal	Scripta Materialia
Volume	54
Issue number	2
DOIs	https://doi.org/10.1016/j.scriptamat.2005.09.045
State	Published - Jan 2006

Keywords

CVD
Compound semiconductors
Ordering
STEM
Single crystal growth

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

Access to Document

10.1016/j.scriptamat.2005.09.045

Cite this

@article{d1a32a28f03b4f279882190f9b40cac4,

title = "Atomic ordering in AlxGa1-xN thin-films",

abstract = "Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.",

keywords = "CVD, Compound semiconductors, Ordering, STEM, Single crystal growth",

author = "Wise, {A. T.} and Kim, {D. W.} and Nathan Newman and S. Mahajan",

note = "Funding Information: The authors would like to gratefully acknowledge the NSF for their support of this research, and the Center for Solid State Science at Arizona State University for their support and the use of their equipment. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2006",

month = jan,

doi = "10.1016/j.scriptamat.2005.09.045",

language = "English (US)",

volume = "54",

pages = "153--157",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Atomic ordering in AlxGa1-xN thin-films

AU - Wise, A. T.

AU - Kim, D. W.

AU - Newman, Nathan

AU - Mahajan, S.

N1 - Funding Information: The authors would like to gratefully acknowledge the NSF for their support of this research, and the Center for Solid State Science at Arizona State University for their support and the use of their equipment. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2006/1

Y1 - 2006/1

N2 - Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

AB - Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

KW - CVD

KW - Compound semiconductors

KW - Ordering

KW - STEM

KW - Single crystal growth

UR - http://www.scopus.com/inward/record.url?scp=27644433947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27644433947&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2005.09.045

DO - 10.1016/j.scriptamat.2005.09.045

M3 - Article

AN - SCOPUS:27644433947

SN - 1359-6462

VL - 54

SP - 153

EP - 157

JO - Scripta Materialia

JF - Scripta Materialia

IS - 2

ER -