Abstract

Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

Original languageEnglish (US)
Pages (from-to)153-157
Number of pages5
JournalScripta Materialia
Volume54
Issue number2
DOIs
StatePublished - Jan 2006

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Organic Chemicals
Organic chemicals
Chemical vapor deposition
Metals
Transmission electron microscopy
Thin films
thin films
metalorganic chemical vapor deposition
transmission electron microscopy

Keywords

  • Compound semiconductors
  • CVD
  • Ordering
  • Single crystal growth
  • STEM

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Metals and Alloys

Cite this

Atomic ordering in AlxGa1-xN thin-films. / Wise, A. T.; Kim, D. W.; Newman, Nathan; Mahajan, S.

In: Scripta Materialia, Vol. 54, No. 2, 01.2006, p. 153-157.

Research output: Contribution to journalArticle

Wise, A. T. ; Kim, D. W. ; Newman, Nathan ; Mahajan, S. / Atomic ordering in AlxGa1-xN thin-films. In: Scripta Materialia. 2006 ; Vol. 54, No. 2. pp. 153-157.
@article{d1a32a28f03b4f279882190f9b40cac4,
title = "Atomic ordering in AlxGa1-xN thin-films",
abstract = "Samples of AlxGa1-xN with xAl = 25{\%}, 48{\%}, and 78{\%} were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.",
keywords = "Compound semiconductors, CVD, Ordering, Single crystal growth, STEM",
author = "Wise, {A. T.} and Kim, {D. W.} and Nathan Newman and S. Mahajan",
year = "2006",
month = "1",
doi = "10.1016/j.scriptamat.2005.09.045",
language = "English (US)",
volume = "54",
pages = "153--157",
journal = "Scripta Materialia",
issn = "1359-6462",
publisher = "Elsevier Limited",
number = "2",

}

TY - JOUR

T1 - Atomic ordering in AlxGa1-xN thin-films

AU - Wise, A. T.

AU - Kim, D. W.

AU - Newman, Nathan

AU - Mahajan, S.

PY - 2006/1

Y1 - 2006/1

N2 - Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

AB - Samples of AlxGa1-xN with xAl = 25%, 48%, and 78% were grown by metal organic chemical vapor deposition and examined using cross-sectional transmission electron microscopy. All samples were shown to exhibit both (0 0 0 1) type ordering spots and streaking. The morphology of the ordered regions was determined to be plate-like on (0 0 0 1) planes, with unequal axes in-plane.

KW - Compound semiconductors

KW - CVD

KW - Ordering

KW - Single crystal growth

KW - STEM

UR - http://www.scopus.com/inward/record.url?scp=27644433947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27644433947&partnerID=8YFLogxK

U2 - 10.1016/j.scriptamat.2005.09.045

DO - 10.1016/j.scriptamat.2005.09.045

M3 - Article

VL - 54

SP - 153

EP - 157

JO - Scripta Materialia

JF - Scripta Materialia

SN - 1359-6462

IS - 2

ER -