Atomic layer epitaxy of device quality GaAs

E. Colas, R. Bhat, B. J. Skromme, G. C. Nihous

Research output: Contribution to journalArticle

17 Scopus citations

Abstract

Device quality GaAs was grown in a conventional organometallic chemical vapor deposition reactor, using sequential group III (trimethylgallium, TMG) and group V (arsine) reactant gas exposures typical of atomic layer epitaxy (ALE). The results show that, at a given temperature, impurity (e.g., carbon) incorporation is controlled by the effective V/III ratio at the growing surface, which is determined by the sequence used in the growth cycles. This effect, specific to ALE, is quantified by solving the diffusion equation that describes concentration transients at the growing surface. Detailed photoluminescence experiments identified C and Mg as the residual acceptors and Ge as the sole residual donor in a 3×1015 cm- 3 n-type background layer with mobilities of 5600 cm2/V s at room temperature and 35 000 cm2/V s at 77 K. A higher purity sample showed reduced levels of Ge, with traces of S, Si, and Te donors and only C acceptors.

Original languageEnglish (US)
Pages (from-to)2769-2771
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number26
DOIs
StatePublished - Dec 1 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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