Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

Martin D. McDaniel, Chengqing Hu, Sirong Lu, Thong Q. Ngo, Agham Posadas, Aiting Jiang, David Smith, Edward T. Yu, Alexander A. Demkov, John G. Ekerdt

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700°C for 5min. The 2×1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2eV), low leakage current (<10-5 A/cm2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1nm, and a reasonable dielectric constant (k∼18). The interface trap density (Dit) is estimated to be as low as ∼2×1012cm-2eV-1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650°C, which may contribute to increased Dit value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

Original languageEnglish (US)
Article number054101
JournalJournal of Applied Physics
Issue number5
StatePublished - Feb 7 2015

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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