Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

Sandwip Dey, C. G. Wang, D. Tang, M. J. Kim, Ray Carpenter, C. Werkhoven, E. Shero

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Abstract

A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

Original languageEnglish (US)
Pages (from-to)4144-4157
Number of pages14
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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