Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry

Sandwip Dey; C. G. Wang; D. Tang; M. J. Kim; Ray Carpenter; C. Werkhoven; E. Shero

doi:10.1063/1.1555257

Atomic layer chemical vapor deposition of ZrO₂-based dielectric films: Nanostructure and nanochemistry

Sandwip Dey, C. G. Wang, D. Tang, M. J. Kim, Ray Carpenter, C. Werkhoven, E. Shero

Chemical Engineering

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40 Scopus citations

Abstract

A study on atomic layer chemical vapor deposition of ZrO₂-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO₂-rich Zr silicate containing about 15% by volume of embedded ZrO₂ nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO₂ and SiO₂. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

Original language	English (US)
Pages (from-to)	4144-4157
Number of pages	14
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1555257
State	Published - Apr 1 2003

ASJC Scopus subject areas

General Physics and Astronomy

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title = "Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry",

abstract = "A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.",

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AU - Dey, Sandwip

AU - Wang, C. G.

AU - Tang, D.

AU - Kim, M. J.

AU - Carpenter, Ray

AU - Werkhoven, C.

AU - Shero, E.

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N2 - A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

AB - A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

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Atomic layer chemical vapor deposition of ZrO₂-based dielectric films: Nanostructure and nanochemistry

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