Atomic layer chemical vapor deposition of ZrO2-based dielectric films

Nanostructure and nanochemistry

Sandwip Dey, C. G. Wang, D. Tang, M. J. Kim, Ray Carpenter, C. Werkhoven, E. Shero

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

Original languageEnglish (US)
Pages (from-to)4144-4157
Number of pages14
JournalJournal of Applied Physics
Volume93
Issue number7
DOIs
StatePublished - Apr 1 2003

Fingerprint

vapor deposition
oxides
silicates
nanocrystals
glass

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Atomic layer chemical vapor deposition of ZrO2-based dielectric films : Nanostructure and nanochemistry. / Dey, Sandwip; Wang, C. G.; Tang, D.; Kim, M. J.; Carpenter, Ray; Werkhoven, C.; Shero, E.

In: Journal of Applied Physics, Vol. 93, No. 7, 01.04.2003, p. 4144-4157.

Research output: Contribution to journalArticle

Dey, Sandwip ; Wang, C. G. ; Tang, D. ; Kim, M. J. ; Carpenter, Ray ; Werkhoven, C. ; Shero, E. / Atomic layer chemical vapor deposition of ZrO2-based dielectric films : Nanostructure and nanochemistry. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 7. pp. 4144-4157.
@article{24649ad691c245feac34b48244321db3,
title = "Atomic layer chemical vapor deposition of ZrO2-based dielectric films: Nanostructure and nanochemistry",
abstract = "A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15{\%} by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.",
author = "Sandwip Dey and Wang, {C. G.} and D. Tang and Kim, {M. J.} and Ray Carpenter and C. Werkhoven and E. Shero",
year = "2003",
month = "4",
day = "1",
doi = "10.1063/1.1555257",
language = "English (US)",
volume = "93",
pages = "4144--4157",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "7",

}

TY - JOUR

T1 - Atomic layer chemical vapor deposition of ZrO2-based dielectric films

T2 - Nanostructure and nanochemistry

AU - Dey, Sandwip

AU - Wang, C. G.

AU - Tang, D.

AU - Kim, M. J.

AU - Carpenter, Ray

AU - Werkhoven, C.

AU - Shero, E.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

AB - A study on atomic layer chemical vapor deposition of ZrO2-based dielectric films was presented. It was found that the deposited layer was amorphous ZrO2-rich Zr silicate containing about 15% by volume of embedded ZrO2 nanocrystals, which were transformed into glass nanoceramics. It was also found that the measured equivalent oxide thickness (EOT) was not consistent with the calculated EOT using a bilayer model of ZrO2 and SiO2. The experimental results showed that a multiphase and heterogeneous structure were evolved which was called Zr-O/IL/Si stack.

UR - http://www.scopus.com/inward/record.url?scp=0037390983&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037390983&partnerID=8YFLogxK

U2 - 10.1063/1.1555257

DO - 10.1063/1.1555257

M3 - Article

VL - 93

SP - 4144

EP - 4157

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -