Atomic force nanolithography of InP for site control growth of InAs nanostructures

H. D. Fonseca-Filho, R. Prioli, M. P. Pires, A. S. Lopes, P. L. Souza, Fernando Ponce

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Abstract

A combination of atomic force nanolithography and metal organic vapor phase epitaxy has been used to control the nucleation of InAs nanostructures on InP substrates. Pits with controlled width and depth were produced on InP with the use of atomic force nanolithography. The number of nucleated nanostructures depends on the applied force and is independent of the geometry of the pits. Study shows that the density of crystalline defects introduced by nanoindentation is responsible for the number of nucleated nanostructures.

Original languageEnglish (US)
Article number013117
JournalApplied Physics Letters
Volume90
Issue number1
DOIs
StatePublished - Jan 15 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Fonseca-Filho, H. D., Prioli, R., Pires, M. P., Lopes, A. S., Souza, P. L., & Ponce, F. (2007). Atomic force nanolithography of InP for site control growth of InAs nanostructures. Applied Physics Letters, 90(1), [013117]. https://doi.org/10.1063/1.2430039