Atomic displacements in the Si(111)-(7×7) surface

Robert Culbertson, L. C. Feldman, P. J. Silverman

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7×7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves 0.4 displacements perpendicular to the surface.

Original languageEnglish (US)
Pages (from-to)2043-2046
Number of pages4
JournalPhysical Review Letters
Volume45
Issue number25
DOIs
StatePublished - 1980
Externally publishedYes

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ion scattering
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Atomic displacements in the Si(111)-(7×7) surface. / Culbertson, Robert; Feldman, L. C.; Silverman, P. J.

In: Physical Review Letters, Vol. 45, No. 25, 1980, p. 2043-2046.

Research output: Contribution to journalArticle

Culbertson, Robert ; Feldman, L. C. ; Silverman, P. J. / Atomic displacements in the Si(111)-(7×7) surface. In: Physical Review Letters. 1980 ; Vol. 45, No. 25. pp. 2043-2046.
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