Atomic displacements in the Si(111)-(7×7) surface

R. J. Culbertson, L. C. Feldman, P. J. Silverman

Research output: Contribution to journalArticlepeer-review

92 Scopus citations


The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7×7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves 0.4 displacements perpendicular to the surface.

Original languageEnglish (US)
Pages (from-to)2043-2046
Number of pages4
JournalPhysical Review Letters
Issue number25
StatePublished - Jan 1 1980
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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