Atomic arrangement at the Au/p-GaN interface in low-resistance contacts

H. Omiya, Fernando Ponce, H. Marui, S. Tanaka, T. Mukai

Research output: Contribution to journalArticle

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Abstract

The atomic arrangement of NiAu contacts on p -type GaN has been studied by transmission electron microscopy (TEM). The initial AuNiGaN structure transforms upon annealing at 400-600°C into NiAuGaN. The Au layer consists of thin platelets with uniform thickness. High-resolution TEM reveals an atomically sharp interface between GaN and Au, with no intermediate phases present. The epitaxial relationship between the Au layer and the GaN film is (111) Au∥ (0002) GaN, and [1 1- 0] Au∥ [11 2- 0] GaN. Analysis of TEM images shows that Au is directly in contact with Ga atoms, with no evidence of presence of Ni. The interface separation corresponds to covalent Ga and metallic Au, with a bond length of ~2.5 Å. This corresponds to an atomically abrupt transition between covalently bonded Ga and metallic bonded Au.

Original languageEnglish (US)
Pages (from-to)6143-6145
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number25
DOIs
StatePublished - Dec 20 2004

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low resistance
transmission electron microscopy
platelets
annealing
high resolution
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic arrangement at the Au/p-GaN interface in low-resistance contacts. / Omiya, H.; Ponce, Fernando; Marui, H.; Tanaka, S.; Mukai, T.

In: Applied Physics Letters, Vol. 85, No. 25, 20.12.2004, p. 6143-6145.

Research output: Contribution to journalArticle

Omiya, H. ; Ponce, Fernando ; Marui, H. ; Tanaka, S. ; Mukai, T. / Atomic arrangement at the Au/p-GaN interface in low-resistance contacts. In: Applied Physics Letters. 2004 ; Vol. 85, No. 25. pp. 6143-6145.
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