Atomic arrangement at the AlN/ZrB2 interface

R. Liu, A. Bell, Fernando Ponce, S. Kamiyama, H. Amano, I. Akasaki

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Low-dislocation-density GaN films (∼108cm-2) have been grown on closely lattice-matched ZrB2 substrates by metalorganic vapor phase epitaxy using low-temperature AlN as a buffer layer. High-resolution electron microscopy images of the AlN/ZrB2 interface region reveal that the AlN buffer layer does not grow directly on the ZrB 2 substrate. Instead, the existence of an unintentional intermediate cubic-phase layer (approximately 2 nm thick) has been observed. Misfit dislocations are evident at both interfaces of the intermediate layer. Our analysis indicates that the intermediate layer has a lattice constant a=4.6Å, and that it is a ternary alloy of ZrxB yNz, which should result from a transformation from the hexagonal phase of ZrB2 due to interdiffusion of nitrogen and boron at the elevated temperature required for growth of GaN. This intermediate cubic-phase layer of ZrxByNz appears to have been so far unavoidable in the growth of high-quality GaN epilayers on ZrB 2 substrates by our technique.

Original languageEnglish (US)
Pages (from-to)3182-3184
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number17
DOIs
StatePublished - Oct 21 2002

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buffers
ternary alloys
vapor phase epitaxy
electron microscopy
boron
nitrogen
high resolution
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Liu, R., Bell, A., Ponce, F., Kamiyama, S., Amano, H., & Akasaki, I. (2002). Atomic arrangement at the AlN/ZrB2 interface. Applied Physics Letters, 81(17), 3182-3184. https://doi.org/10.1063/1.1516876

Atomic arrangement at the AlN/ZrB2 interface. / Liu, R.; Bell, A.; Ponce, Fernando; Kamiyama, S.; Amano, H.; Akasaki, I.

In: Applied Physics Letters, Vol. 81, No. 17, 21.10.2002, p. 3182-3184.

Research output: Contribution to journalArticle

Liu, R, Bell, A, Ponce, F, Kamiyama, S, Amano, H & Akasaki, I 2002, 'Atomic arrangement at the AlN/ZrB2 interface', Applied Physics Letters, vol. 81, no. 17, pp. 3182-3184. https://doi.org/10.1063/1.1516876
Liu R, Bell A, Ponce F, Kamiyama S, Amano H, Akasaki I. Atomic arrangement at the AlN/ZrB2 interface. Applied Physics Letters. 2002 Oct 21;81(17):3182-3184. https://doi.org/10.1063/1.1516876
Liu, R. ; Bell, A. ; Ponce, Fernando ; Kamiyama, S. ; Amano, H. ; Akasaki, I. / Atomic arrangement at the AlN/ZrB2 interface. In: Applied Physics Letters. 2002 ; Vol. 81, No. 17. pp. 3182-3184.
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