Atomic arrangement at the AlN/SiC interface

F. Ponce, C. Van de Walle, J. Northrup

Research output: Contribution to journalArticle

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Abstract

The lattice structure of the AlN/SiC interface has been studied in cross section by high-resolution transmission-electron microscopy. Lattice images show planar and crystallographically abrupt interfaces. The atomic arrangement at the plane of the interface is analyzed based on the image characteristics. Possible bonding configurations are discussed. Variations in local image contrast and interplanar separations are used to identify atomic bonding configurations consistent with the lattice images.

Original languageEnglish (US)
Pages (from-to)7473-7478
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number11
DOIs
StatePublished - Jan 1 1996
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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