Atomic arrangement at the AlN/Si(110) interface

Oscar E. Contreras, Francisco Ruiz-Zepeda, Armin Dadgar, Alois Krost, Fernando Ponce

Research output: Contribution to journalArticle

10 Scopus citations

Abstract

GaN has been grown on Si(110) substrates by metalorganic vapor phase epitaxy using a low-temperature AIN nucleation layer. The atomic arrangement at the AlN/substrate interface has been investigated by high-resolution transmission electron microscopy. Lattice images of the AlN/Si Interface taken along the 〈11 2̄0〉AlN // 〈 11̄0〉 Si and 〈11̄00〉AlN // 〈001 〉Si projections show an abrupt crystalline interface. A highly coherent epitaxial relationship between (1̄00)AlN and (001) Si planes Is observed. The atomic bonding configuration at the AIN/SI interface is analyzed taking into consideration the chemical coordination, lattice mismatch, and net charge balance. A structure model of the bonding at the interface is presented.

Original languageEnglish (US)
Pages (from-to)611041-611043
Number of pages3
JournalApplied Physics Express
Volume1
Issue number6
DOIs
StatePublished - Jun 1 2008

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Contreras, O. E., Ruiz-Zepeda, F., Dadgar, A., Krost, A., & Ponce, F. (2008). Atomic arrangement at the AlN/Si(110) interface. Applied Physics Express, 1(6), 611041-611043. https://doi.org/10.1143/APEX.1.061104