Abstract
A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.
Original language | English (US) |
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Pages (from-to) | 860-862 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 5 |
DOIs | |
State | Published - Aug 4 2003 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)