A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Aug 4 2003|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)