Atomic arrangement at the AIN/Si (111) interface

R. Liu, Fernando Ponce, A. Dadgar, A. Krost

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Abstract

A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

Original languageEnglish (US)
Pages (from-to)860-862
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
Publication statusPublished - Aug 4 2003

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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