Atomic arrangement at the AIN/Si (111) interface

R. Liu, Fernando Ponce, A. Dadgar, A. Krost

Research output: Contribution to journalArticle

104 Citations (Scopus)

Abstract

A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

Original languageEnglish (US)
Pages (from-to)860-862
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number5
DOIs
StatePublished - Aug 4 2003

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electron microscopy
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic arrangement at the AIN/Si (111) interface. / Liu, R.; Ponce, Fernando; Dadgar, A.; Krost, A.

In: Applied Physics Letters, Vol. 83, No. 5, 04.08.2003, p. 860-862.

Research output: Contribution to journalArticle

Liu, R. ; Ponce, Fernando ; Dadgar, A. ; Krost, A. / Atomic arrangement at the AIN/Si (111) interface. In: Applied Physics Letters. 2003 ; Vol. 83, No. 5. pp. 860-862.
@article{73cf667ef91849dea9181190742eebbd,
title = "Atomic arrangement at the AIN/Si (111) interface",
abstract = "A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.",
author = "R. Liu and Fernando Ponce and A. Dadgar and A. Krost",
year = "2003",
month = "8",
day = "4",
doi = "10.1063/1.1597749",
language = "English (US)",
volume = "83",
pages = "860--862",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Atomic arrangement at the AIN/Si (111) interface

AU - Liu, R.

AU - Ponce, Fernando

AU - Dadgar, A.

AU - Krost, A.

PY - 2003/8/4

Y1 - 2003/8/4

N2 - A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

AB - A discussion about the atomic arrangement at the AlN/Si (111) interface was presented. The investigation of the atomic arrangement was done using high-resolution electron microscopy. The observation of crystallographically abrupt interface along most of the epilayer indicated that the AlN/Si interface was thermodynamically stable and of high crystalline quality.

UR - http://www.scopus.com/inward/record.url?scp=0042378607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0042378607&partnerID=8YFLogxK

U2 - 10.1063/1.1597749

DO - 10.1063/1.1597749

M3 - Article

VL - 83

SP - 860

EP - 862

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -