Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe) 5 (Bi 2 Se 3 ) 3

Xiaochen Ren, Arunima K. Singh, Lei Fang, Mercouri G. Kanatzidis, Francesca Tavazza, Albert V. Davydov, Lincoln J. Lauhon

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows that Ag dopes both Bi 2 Se 3 and PbSe layers in (PbSe) 5 (Bi 2 Se 3 ) 3 , and correlations in the position of Ag atoms suggest a pairing across neighboring Bi 2 Se 3 and PbSe layers. Density functional theory (DFT) calculations confirm the favorability of substitutional doping for both Pb and Bi and provide insights into the observed spatial correlations in dopant locations.

Original languageEnglish (US)
Pages (from-to)6064-6069
Number of pages6
JournalNano Letters
Volume16
Issue number10
DOIs
StatePublished - Oct 12 2016
Externally publishedYes

Keywords

  • 2D materials
  • Atom probe tomography
  • DFT
  • Doping
  • Materials genome initiative

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Ren, X., Singh, A. K., Fang, L., Kanatzidis, M. G., Tavazza, F., Davydov, A. V., & Lauhon, L. J. (2016). Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe) 5 (Bi 2 Se 3 ) 3 Nano Letters, 16(10), 6064-6069. https://doi.org/10.1021/acs.nanolett.6b02104