@inproceedings{cbbe8e10c4ee46d3a71a52a4705a3a76,
title = "Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET",
abstract = "We have utilized fully self-consistent quantum mechanical simulator based on Contact Block Reduction (CBR) method, to simulate experimentally fabricated 10nm FinFET device. A series of simulations have been performed with varying S/D extension length and doping profile to match the experimental data. The simulation results have been found to be in good agreement with the experimental data in the subthreshold regime. Small signal analysis has been performed to extract device capacitances and to compare the intrinsic propagation delay to that of experimental device.",
author = "H. Khan and D. Mamaluy and Dragica Vasileska",
year = "2007",
doi = "10.1149/1.2728861",
language = "English (US)",
isbn = "9781566775533",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "197--203",
booktitle = "ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices",
edition = "4",
note = "13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting ; Conference date: 06-05-2007 Through 11-05-2007",
}