Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET

H. Khan, D. Mamaluy, Dragica Vasileska

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have utilized fully self-consistent quantum mechanical simulator based on Contact Block Reduction (CBR) method, to simulate experimentally fabricated 10nm FinFET device. A series of simulations have been performed with varying S/D extension length and doping profile to match the experimental data. The simulation results have been found to be in good agreement with the experimental data in the subthreshold regime. Small signal analysis has been performed to extract device capacitances and to compare the intrinsic propagation delay to that of experimental device.

Original languageEnglish (US)
Title of host publicationECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices
Pages197-203
Number of pages7
Edition4
DOIs
StatePublished - Dec 1 2007
Event13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting - Chicago, IL, United States
Duration: May 6 2007May 11 2007

Publication series

NameECS Transactions
Number4
Volume6
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other13th International Symposium on Silicon-On-Insulator Technology and Devices - 211th ECS Meeting
CountryUnited States
CityChicago, IL
Period5/6/075/11/07

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Khan, H., Mamaluy, D., & Vasileska, D. (2007). Assessment of the CBR quantum transport simulator on experimentally fabricated nano-FinFET. In ECS Transactions - 13th International Symposium on Silicon-On-Insulator Technology and Devices (4 ed., pp. 197-203). (ECS Transactions; Vol. 6, No. 4). https://doi.org/10.1149/1.2728861