Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

J. B. Posthill; R. J. Markunas; T. P. Humphreys; R. J. Nemanich; K. Das; N. R. Parikh; P. L. Ross; C. J. Miner

doi:10.1063/1.102208

Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

J. B. Posthill, R. J. Markunas, T. P. Humphreys, R. J. Nemanich, K. Das, N. R. Parikh, P. L. Ross, C. J. Miner

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.

Original language	English (US)
Pages (from-to)	1756-1758
Number of pages	3
Journal	Applied Physics Letters
Volume	55
Issue number	17
DOIs	https://doi.org/10.1063/1.102208
State	Published - 1989
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy",

abstract = "Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.",

author = "Posthill, {J. B.} and Markunas, {R. J.} and Humphreys, {T. P.} and Nemanich, {R. J.} and K. Das and Parikh, {N. R.} and Ross, {P. L.} and Miner, {C. J.}",

year = "1989",

doi = "10.1063/1.102208",

language = "English (US)",

volume = "55",

pages = "1756--1758",

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T1 - Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

AU - Posthill, J. B.

AU - Markunas, R. J.

AU - Humphreys, T. P.

AU - Nemanich, R. J.

AU - Das, K.

AU - Parikh, N. R.

AU - Ross, P. L.

AU - Miner, C. J.

PY - 1989

Y1 - 1989

N2 - Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.

AB - Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

Abstract

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