Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)