Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy

J. B. Posthill, R. J. Markunas, T. P. Humphreys, R. J. Nemanich, K. Das, N. R. Parikh, P. L. Ross, C. J. Miner

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Abstract

Characterization of heteroepitaxial GaAs grown on silicon-on-sapphire that had been microstructurally upgraded by the double solid phase epitaxy process reveals that microtwining and surface roughness are substantially reduced. Moreover, the thermally induced elastic strain in the GaAs film is found to be reduced by over a factor of 4 from the strain measured in GaAs-on-Si (100) grown in the same manner. The low-temperature photoluminescence characteristics are similar to GaAs homoepitaxial films grown by molecular beam epitaxy.

Original languageEnglish (US)
Pages (from-to)1756-1758
Number of pages3
JournalApplied Physics Letters
Volume55
Issue number17
DOIs
StatePublished - Dec 1 1989

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Posthill, J. B., Markunas, R. J., Humphreys, T. P., Nemanich, R. J., Das, K., Parikh, N. R., Ross, P. L., & Miner, C. J. (1989). Assessment of GaAs heteroepitaxial films grown on silicon-on-sapphire upgraded by double solid phase epitaxy. Applied Physics Letters, 55(17), 1756-1758. https://doi.org/10.1063/1.102208