Assessing TiOxas a hole-selective contact for silicon heterojunction solar cells

David Quispe, Brian J. Coppa, Ty Newhouse-Illige, Peter Firth, Zachary C. Holman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transparent materials with tunable work functions are attractive for carrier-selective contacts with minimal current loss caused by parasitic absorption. We investigate the viability of TiOx, deposited using a novel aerosol-based tool, as a wide-bandgap hole-selective contact to replace p-type amorphous silicon in silicon heterojunction solar cells. Cells with a TiOx hole contact and no intrinsic amorphous silicon passivation layer achieve contact resistivities as low as 0.1 Ωcm2 but have low implied open-circuit voltages, resulting in cell efficiencies as high as 14.7%. Including the passivation layer increases the implied open-circuit voltage to above 720 mV but markedly reduces the contact's selectivity.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1492-1494
Number of pages3
ISBN (Electronic)9781665419222
DOIs
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale
Period6/20/216/25/21

Keywords

  • carrier-selective contact
  • contact resistivity
  • silicon heterojunction solar cell
  • TiOx

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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