Abstract

We report a comparison between state-of-the-art GaN and InGaAs HEMTs in terms of the minimum aspect ratio required to limit short-channel effects. DC and RF simulations were carried out through our full-band cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. Our results indicate that the minimum aspect ratio for GaN devices is 15 for negligible short-channel effects and 10 for reduced short-channel effects. On the other hand, InGaAs devices perform well for lower aspect ratio values such as 7.5 and 4-5 for negligible and reduced effects, respectively. The origin of this difference between GaN and InGaAs HEMTs is believed to be related to the different dielectric constants of the two materials and the corresponding difference in the electric field distributions related to short-channel effects.

Original languageEnglish (US)
Article number5585697
Pages (from-to)1217-1219
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number11
DOIs
StatePublished - Nov 2010

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High electron mobility transistors
Aspect ratio
Band structure
Permittivity
Simulators
Electric fields

Keywords

  • Aspect ratio
  • GaN
  • high-electron mobility transistor (HEMT)
  • InGaAs
  • Monte Carlo
  • N-face
  • numerical simulation
  • short-channel effects

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs. / Guerra, Diego; Akis, Richard; Marino, Fabio A.; Ferry, David K.; Goodnick, Stephen; Saraniti, Marco.

In: IEEE Electron Device Letters, Vol. 31, No. 11, 5585697, 11.2010, p. 1217-1219.

Research output: Contribution to journalArticle

Guerra, Diego ; Akis, Richard ; Marino, Fabio A. ; Ferry, David K. ; Goodnick, Stephen ; Saraniti, Marco. / Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 11. pp. 1217-1219.
@article{2be9987dadb946a0b8d0c578863e3ea9,
title = "Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs",
abstract = "We report a comparison between state-of-the-art GaN and InGaAs HEMTs in terms of the minimum aspect ratio required to limit short-channel effects. DC and RF simulations were carried out through our full-band cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. Our results indicate that the minimum aspect ratio for GaN devices is 15 for negligible short-channel effects and 10 for reduced short-channel effects. On the other hand, InGaAs devices perform well for lower aspect ratio values such as 7.5 and 4-5 for negligible and reduced effects, respectively. The origin of this difference between GaN and InGaAs HEMTs is believed to be related to the different dielectric constants of the two materials and the corresponding difference in the electric field distributions related to short-channel effects.",
keywords = "Aspect ratio, GaN, high-electron mobility transistor (HEMT), InGaAs, Monte Carlo, N-face, numerical simulation, short-channel effects",
author = "Diego Guerra and Richard Akis and Marino, {Fabio A.} and Ferry, {David K.} and Stephen Goodnick and Marco Saraniti",
year = "2010",
month = "11",
doi = "10.1109/LED.2010.2066954",
language = "English (US)",
volume = "31",
pages = "1217--1219",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "11",

}

TY - JOUR

T1 - Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs

AU - Guerra, Diego

AU - Akis, Richard

AU - Marino, Fabio A.

AU - Ferry, David K.

AU - Goodnick, Stephen

AU - Saraniti, Marco

PY - 2010/11

Y1 - 2010/11

N2 - We report a comparison between state-of-the-art GaN and InGaAs HEMTs in terms of the minimum aspect ratio required to limit short-channel effects. DC and RF simulations were carried out through our full-band cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. Our results indicate that the minimum aspect ratio for GaN devices is 15 for negligible short-channel effects and 10 for reduced short-channel effects. On the other hand, InGaAs devices perform well for lower aspect ratio values such as 7.5 and 4-5 for negligible and reduced effects, respectively. The origin of this difference between GaN and InGaAs HEMTs is believed to be related to the different dielectric constants of the two materials and the corresponding difference in the electric field distributions related to short-channel effects.

AB - We report a comparison between state-of-the-art GaN and InGaAs HEMTs in terms of the minimum aspect ratio required to limit short-channel effects. DC and RF simulations were carried out through our full-band cellular Monte Carlo simulator, which includes the full details of the band structure and the phonon spectra. Our results indicate that the minimum aspect ratio for GaN devices is 15 for negligible short-channel effects and 10 for reduced short-channel effects. On the other hand, InGaAs devices perform well for lower aspect ratio values such as 7.5 and 4-5 for negligible and reduced effects, respectively. The origin of this difference between GaN and InGaAs HEMTs is believed to be related to the different dielectric constants of the two materials and the corresponding difference in the electric field distributions related to short-channel effects.

KW - Aspect ratio

KW - GaN

KW - high-electron mobility transistor (HEMT)

KW - InGaAs

KW - Monte Carlo

KW - N-face

KW - numerical simulation

KW - short-channel effects

UR - http://www.scopus.com/inward/record.url?scp=77958569282&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77958569282&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2066954

DO - 10.1109/LED.2010.2066954

M3 - Article

AN - SCOPUS:77958569282

VL - 31

SP - 1217

EP - 1219

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

M1 - 5585697

ER -