Abstract
This work discusses the ASAP7 predictive process design kit (PDK) and associated standard cell library. The necessity for multi-patterning (MP) techniques at advanced nodes results in the standard cell and SRAM architecture becoming entangled with design rules, mandating design-technology co-optimization (DTCO). This paper discusses the DTCO process involving standard cell physical design. An assumption of extreme ultraviolet (EUV) lithography availability in the PDK allows bi-directional M1 geometries that are difficult with MP. Routing and power distribution schemes for self-aligned quadruple patterning (SAQP) friendly, high density standard cell based blocks are shown. Restrictive design rules are required and supported by the automated place and route (APR) setup. Supporting sub-20 nm dimensions with academic tool licenses is described. The APR (QRC techfile) extraction shows high correlation with the Calibre extraction deck. Finally, use of the PDK for academic coursework and research is discussed.
Original language | English (US) |
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Title of host publication | 2017 IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017 |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 992-998 |
Number of pages | 7 |
Volume | 2017-November |
ISBN (Electronic) | 9781538630938 |
DOIs | |
State | Published - Dec 13 2017 |
Event | 36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017 - Irvine, United States Duration: Nov 13 2017 → Nov 16 2017 |
Other
Other | 36th IEEE/ACM International Conference on Computer-Aided Design, ICCAD 2017 |
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Country/Territory | United States |
City | Irvine |
Period | 11/13/17 → 11/16/17 |
Keywords
- Automatic place and route
- Design Rules
- EUV
- FinFET
- Parasitic Extraction
- Physical Design
- Standard Cell Library
- Timing Characterization
ASJC Scopus subject areas
- Software
- Computer Science Applications
- Computer Graphics and Computer-Aided Design