@inproceedings{115538d37b2046ff9d1e4652c8b6bc3b,
title = "As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency",
abstract = "An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.",
keywords = "Complex permittivity, microwave annealing, silicon wafer dielectric constant, temperature curve",
author = "Siddharth Varadan and George Pan and Zhao Zhao and Terry Alford",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 ; Conference date: 12-04-2015 Through 16-04-2015",
year = "2015",
month = jun,
day = "29",
doi = "10.1109/FCS.2015.7138802",
language = "English (US)",
series = "2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "111--116",
booktitle = "2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings",
}