Abstract
An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.
| Original language | English (US) |
|---|---|
| Title of host publication | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 111-116 |
| Number of pages | 6 |
| ISBN (Print) | 9781479988662 |
| DOIs | |
| State | Published - Jun 29 2015 |
| Event | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Denver, United States Duration: Apr 12 2015 → Apr 16 2015 |
Other
| Other | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 |
|---|---|
| Country | United States |
| City | Denver |
| Period | 4/12/15 → 4/16/15 |
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Keywords
- Complex permittivity
- microwave annealing
- silicon wafer dielectric constant
- temperature curve
ASJC Scopus subject areas
- Computer Networks and Communications
- Signal Processing
Cite this
As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. / Varadan, Siddharth; Pan, George; Zhao, Zhao; Alford, Terry.
2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. p. 111-116 7138802.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency
AU - Varadan, Siddharth
AU - Pan, George
AU - Zhao, Zhao
AU - Alford, Terry
PY - 2015/6/29
Y1 - 2015/6/29
N2 - An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.
AB - An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.
KW - Complex permittivity
KW - microwave annealing
KW - silicon wafer dielectric constant
KW - temperature curve
UR - http://www.scopus.com/inward/record.url?scp=84943275968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84943275968&partnerID=8YFLogxK
U2 - 10.1109/FCS.2015.7138802
DO - 10.1109/FCS.2015.7138802
M3 - Conference contribution
AN - SCOPUS:84943275968
SN - 9781479988662
SP - 111
EP - 116
BT - 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -