Abstract
An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.
Original language | English (US) |
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Title of host publication | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 111-116 |
Number of pages | 6 |
ISBN (Print) | 9781479988662 |
DOIs | |
State | Published - Jun 29 2015 |
Event | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Denver, United States Duration: Apr 12 2015 → Apr 16 2015 |
Other
Other | 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 |
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Country | United States |
City | Denver |
Period | 4/12/15 → 4/16/15 |
Keywords
- Complex permittivity
- microwave annealing
- silicon wafer dielectric constant
- temperature curve
ASJC Scopus subject areas
- Computer Networks and Communications
- Signal Processing