As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency

Siddharth Varadan; George Pan; Zhao Zhao; Terry Alford

doi:10.1109/FCS.2015.7138802

As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency

Siddharth Varadan, George Pan, Zhao Zhao, Terry Alford

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.

Original language	English (US)
Title of host publication	2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	111-116
Number of pages	6
ISBN (Print)	9781479988662
DOIs	https://doi.org/10.1109/FCS.2015.7138802
State	Published - Jun 29 2015
Event	2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Denver, United States Duration: Apr 12 2015 → Apr 16 2015

Other

Other	2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015
Country/Territory	United States
City	Denver
Period	4/12/15 → 4/16/15

Keywords

Complex permittivity
microwave annealing
silicon wafer dielectric constant
temperature curve

ASJC Scopus subject areas

Computer Networks and Communications
Signal Processing

Access to Document

10.1109/FCS.2015.7138802

Cite this

Varadan, S., Pan, G., Zhao, Z., & Alford, T. (2015). As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. In 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings (pp. 111-116). [7138802] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/FCS.2015.7138802

As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. / Varadan, Siddharth; Pan, George; Zhao, Zhao; Alford, Terry.

2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. p. 111-116 7138802.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Varadan, S, Pan, G, Zhao, Z & Alford, T 2015, As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. in 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings., 7138802, Institute of Electrical and Electronics Engineers Inc., pp. 111-116, 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015, Denver, United States, 4/12/15. https://doi.org/10.1109/FCS.2015.7138802

Varadan S, Pan G, Zhao Z, Alford T. As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. In 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. p. 111-116. 7138802 https://doi.org/10.1109/FCS.2015.7138802

Varadan, Siddharth ; Pan, George ; Zhao, Zhao ; Alford, Terry. / As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 111-116

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abstract = "An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.",

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As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency

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