Abstract

An analysis to determine the complex permittivity of arsenic-doped silicon wafer at 2.45 GHz is presented based on closed-form analytical expressions for cylindrical symmetry. Experimental results in support with the numerical analysis and simulation results are also presented. This analysis will further help analyze the capacitive heating of doped and undoped silicon wafer at microwave frequency; hence, this paper is a precursor to elucidation of capacitive heating of silicon substrates placed between susceptors. This study indicates that when the dopant is added to the silicon the loss tangent decreases with increase in concentration but upon annealing the loss tangent becomes constant with respect to concentration of the dopant.

Original languageEnglish (US)
Title of host publication2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages111-116
Number of pages6
ISBN (Print)9781479988662
DOIs
StatePublished - Jun 29 2015
Event2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Denver, United States
Duration: Apr 12 2015Apr 16 2015

Other

Other2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015
CountryUnited States
CityDenver
Period4/12/154/16/15

Fingerprint

Silicon wafers
Permittivity
Doping (additives)
Heating
Silicon
Microwave frequencies
Arsenic
Numerical analysis
Annealing
Computer simulation
Substrates

Keywords

  • Complex permittivity
  • microwave annealing
  • silicon wafer dielectric constant
  • temperature curve

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Signal Processing

Cite this

Varadan, S., Pan, G., Zhao, Z., & Alford, T. (2015). As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. In 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings (pp. 111-116). [7138802] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/FCS.2015.7138802

As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. / Varadan, Siddharth; Pan, George; Zhao, Zhao; Alford, Terry.

2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. p. 111-116 7138802.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Varadan, S, Pan, G, Zhao, Z & Alford, T 2015, As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. in 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings., 7138802, Institute of Electrical and Electronics Engineers Inc., pp. 111-116, 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015, Denver, United States, 4/12/15. https://doi.org/10.1109/FCS.2015.7138802
Varadan S, Pan G, Zhao Z, Alford T. As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. In 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. p. 111-116. 7138802 https://doi.org/10.1109/FCS.2015.7138802
Varadan, Siddharth ; Pan, George ; Zhao, Zhao ; Alford, Terry. / As-doped Si's complex permittivity and its effects on heating curve at 2.45 GHz frequency. 2015 Joint Conference of the IEEE International Frequency Control Symposium and the European Frequency and Time Forum, FCS 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 111-116
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