Arsenic precipitation in GaAs for single-electron tunneling applications

C. Y. Hung, J. S. Harris, A. F. Marshall, Richard Kiehl

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Compositional control of precipitate position by preferential precipitation in a GaAs well sandwiched between low-temperature grown AlGaAs arsenic supply layers is examined for single-electron tunneling applications, where closely spaced particles a few nanometers in diameter are required. Control of small particles formed at low annealing temperatures where positional control is expected to be more difficult is examined. The use of a superlattice supply layer to intentionally increase the arsenic diffusion from the AlGaAs into the GaAs well is also examined. The results suggest useful directions for realizing controlled precipitation at scales of interest for single-electron tunneling applications.

Original languageEnglish (US)
Title of host publicationProceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997
EditorsMike Melloch, Mark A. Reed
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages135-138
Number of pages4
ISBN (Print)0780338839, 9780780338838
DOIs
StatePublished - Jan 1 1997
Externally publishedYes
Event24th IEEE International Symposium on Compound Semiconductors, ISCS 1997 - San Diego, United States
Duration: Sep 8 1997Sep 11 1997

Other

Other24th IEEE International Symposium on Compound Semiconductors, ISCS 1997
CountryUnited States
CitySan Diego
Period9/8/979/11/97

Fingerprint

Electron tunneling
Arsenic
Precipitates
Annealing
Temperature
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hung, C. Y., Harris, J. S., Marshall, A. F., & Kiehl, R. (1997). Arsenic precipitation in GaAs for single-electron tunneling applications. In M. Melloch, & M. A. Reed (Eds.), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997 (pp. 135-138). [711598] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.1998.711598

Arsenic precipitation in GaAs for single-electron tunneling applications. / Hung, C. Y.; Harris, J. S.; Marshall, A. F.; Kiehl, Richard.

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. ed. / Mike Melloch; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. p. 135-138 711598.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hung, CY, Harris, JS, Marshall, AF & Kiehl, R 1997, Arsenic precipitation in GaAs for single-electron tunneling applications. in M Melloch & MA Reed (eds), Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997., 711598, Institute of Electrical and Electronics Engineers Inc., pp. 135-138, 24th IEEE International Symposium on Compound Semiconductors, ISCS 1997, San Diego, United States, 9/8/97. https://doi.org/10.1109/ISCS.1998.711598
Hung CY, Harris JS, Marshall AF, Kiehl R. Arsenic precipitation in GaAs for single-electron tunneling applications. In Melloch M, Reed MA, editors, Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. Institute of Electrical and Electronics Engineers Inc. 1997. p. 135-138. 711598 https://doi.org/10.1109/ISCS.1998.711598
Hung, C. Y. ; Harris, J. S. ; Marshall, A. F. ; Kiehl, Richard. / Arsenic precipitation in GaAs for single-electron tunneling applications. Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997. editor / Mike Melloch ; Mark A. Reed. Institute of Electrical and Electronics Engineers Inc., 1997. pp. 135-138
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