Abstract

Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.

Original languageEnglish (US)
Pages (from-to)688-690
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number6
DOIs
StatePublished - 1991

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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