Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.

Original languageEnglish (US)
Pages (from-to)688-690
Number of pages3
JournalApplied Physics Letters
Issue number6
StatePublished - Dec 1 1991


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y-H., & Skromme, B. (1991). Arsenic-doped P-type ZnTe grown by molecular beam epitaxy. Applied Physics Letters, 59(6), 688-690. https://doi.org/10.1063/1.105366