Abstract

Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.

Original languageEnglish (US)
Pages (from-to)688-690
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number6
DOIs
StatePublished - 1991

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arsenic
molecular beam epitaxy
photoconductivity
electrical measurement
saturation
photoluminescence
cells

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Turco-Sandroff, F. S., Brasil, M. J. S. P., Nahory, R. E., Martin, R. J., Zhang, Y-H., & Skromme, B. (1991). Arsenic-doped P-type ZnTe grown by molecular beam epitaxy. Applied Physics Letters, 59(6), 688-690. https://doi.org/10.1063/1.105366

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy. / Turco-Sandroff, F. S.; Brasil, M. J S P; Nahory, R. E.; Martin, R. J.; Zhang, Yong-Hang; Skromme, Brian.

In: Applied Physics Letters, Vol. 59, No. 6, 1991, p. 688-690.

Research output: Contribution to journalArticle

Turco-Sandroff, FS, Brasil, MJSP, Nahory, RE, Martin, RJ, Zhang, Y-H & Skromme, B 1991, 'Arsenic-doped P-type ZnTe grown by molecular beam epitaxy', Applied Physics Letters, vol. 59, no. 6, pp. 688-690. https://doi.org/10.1063/1.105366
Turco-Sandroff, F. S. ; Brasil, M. J S P ; Nahory, R. E. ; Martin, R. J. ; Zhang, Yong-Hang ; Skromme, Brian. / Arsenic-doped P-type ZnTe grown by molecular beam epitaxy. In: Applied Physics Letters. 1991 ; Vol. 59, No. 6. pp. 688-690.
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