Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

F. S. Turco-Sandroff; M. J S P Brasil; R. E. Nahory; R. J. Martin; Yong-Hang Zhang; Brian Skromme

doi:10.1063/1.105366

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

F. S. Turco-Sandroff, M. J S P Brasil, R. E. Nahory, R. J. Martin, Yong-Hang Zhang, Brian Skromme

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Efficient p doping of ZnTe by arsenic has been achieved using a Zn ₃As₂ effusion cell. Doping levels of ZnTe/GaAs can be controlled from 10¹⁶ to 10¹⁸ cm ^-3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 10¹⁷ cm^-3 but electrical measurements show no saturation for doping as high as 10 ¹⁸ cm^-3.

Original language	English (US)
Pages (from-to)	688-690
Number of pages	3
Journal	Applied Physics Letters
Volume	59
Issue number	6
DOIs	https://doi.org/10.1063/1.105366
State	Published - 1991

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.105366

Cite this

@article{270fb91c2a90484eb44dee5ea6d3e552,

title = "Arsenic-doped P-type ZnTe grown by molecular beam epitaxy",

abstract = "Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.",

author = "Turco-Sandroff, {F. S.} and Brasil, {M. J S P} and Nahory, {R. E.} and Martin, {R. J.} and Yong-Hang Zhang and Brian Skromme",

year = "1991",

doi = "10.1063/1.105366",

language = "English (US)",

volume = "59",

pages = "688--690",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "6",

}

TY - JOUR

T1 - Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

AU - Turco-Sandroff, F. S.

AU - Brasil, M. J S P

AU - Nahory, R. E.

AU - Martin, R. J.

AU - Zhang, Yong-Hang

AU - Skromme, Brian

PY - 1991

Y1 - 1991

N2 - Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.

AB - Efficient p doping of ZnTe by arsenic has been achieved using a Zn 3As2 effusion cell. Doping levels of ZnTe/GaAs can be controlled from 1016 to 1018 cm -3. The carrier concentration is independent of the substrate used, ZnTe:As/GaAs and ZnTe:As/InP giving similar results. Spectral photoconductivity and low-temperature photoluminescence, however, show an increase of deep levels for doping levels higher than 1017 cm-3 but electrical measurements show no saturation for doping as high as 10 18 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=0346298934&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0346298934&partnerID=8YFLogxK

U2 - 10.1063/1.105366

DO - 10.1063/1.105366

M3 - Article

AN - SCOPUS:0346298934

SN - 0003-6951

VL - 59

SP - 688

EP - 690

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Arsenic-doped P-type ZnTe grown by molecular beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this